TC4421 TelCom Semiconductor, TC4421 Datasheet - Page 2

• Manufacturer Part Number: TC4421
• Description: (TC4421 / TC4422) 9A HIGH-SPEED MOSFET DRIVERS
• Manufacturer: TelCom Semiconductor

TC4421
TC4422
ELECTRICAL CHARACTERISTICS:
Symbol
V
V
I
Output
V
V
R
R
I
I
I
Switching Time (Note 1)
t
t
t
t
Power Supply
I
V
Input
V
V
I
4-232
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation, T
Power Dissipation, T
Derating Factors (To Ambient)
Thermal Impedance (To Case)
Storage Temperature ............................ – 65 C to +150 C
Operating Temperature (Chip) ................................ 150 C
Input
IN
PK
DC
REV
R
F
D1
D2
S
IN
IH
IL
OH
OL
DD
IH
IL
O
O
PDIP ..................................................................730W
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
5-Pin TO-220 (With Heat Sink) .........................1.60W
PDIP ............................................................. 8mW/ C
CerDIP ....................................................... 6.4mW/ C
5-Pin TO-220 .............................................. 12mW/ C
5-Pin TO-220 R
QJ-C .....................................................
A
A
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Operating Input Voltage
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
70 C
70 C
Parameter
T
A
= 25 C with 4.5V
Test Conditions
0V
See Figure 1
See Figure 1
V
V
V
10V
(TC4421/22 CAT only)
Duty Cycle
Withstand Reverse Current
Figure 1, C
Figure 1, C
Figure 1
Figure 1
V
V
0V
10 C/W
DD
DD
DD
IN
IN
= 3V
= 0V
= 18V, I
= 18V, I
= 18V
V
V
V
IN
IN
DD
V
V
L
L
DD
O
O
DD
= 10,000 pF
= 10,000 pF
18V, T
2%
= 10 mA
= 10 mA
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Operating Temperature (Ambient)
Lead Temperature (10 sec) ..................................... 300 C
Supply Voltage ............................................................20V
Input Voltage .......................... (V
Input Current (V
C Version ............................................... 0 C to +70 C
E Version .......................................... – 40 C to +85 C
M Version ....................................... – 55 C to +125 C
C
9A HIGH-SPEED MOSFET DRIVERS
V
= 25
DD
18V unless otherwise specified.
IN
t
V
> V
DD
>1500
300 sec
Min
– 10
– 10
TELCOM SEMICONDUCTOR, INC.
2.4
– 0.025
4.5
2.4
DD
—
—
—
—
—
—
—
—
—
—
—
—
2
) ........................................ 50 mA
DD
Typ
1.8
1.3
1.4
0.9
0.2
60
60
30
33
55
—
—
—
—
—
—
—
—
9
+ 0.3V) to (GND - 5V)
0.025
Max
150
0.8
1.7
1.5
0.8
10
75
75
60
60
18
10
—
—
—
—
—
—
Unit
nsec
nsec
nsec
nsec
mA
mA
V
V
V
V
A
A
V
V
V
A
A
A