TC1413 TelCom Semiconductor, TC1413 Datasheet - Page 2

• Manufacturer Part Number: TC1413
• Description: HIGH-SPEED MOSFET DRIVERS
• Manufacturer: TelCom Semiconductor

ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(V
Maximum Chip Temperature ................................. +150 C
Storage Temperature Range ................ – 65 C to +150 C
Lead Temperature (Soldering, 10 sec) ................. +300 C
Package Thermal Resistance
ELECTRICAL CHARACTERISTICS:
Symbol
Input
V
V
I
Output
V
V
R
I
I
Switching Time (Note 1)
t
t
t
t
Power Supply
I
NOTE: 1. Switching times are guaranteed by design.
4-202
TC1413
TC1413N
IN
PK
REV
R
F
D1
D2
S
IH
IL
OH
OL
O
CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R
J-A
J-C
J-A
J-C
J-A
J-C
................................................... 125 C/W
..................................................... 42 C/W
................................................... 155 C/W
..................................................... 45 C/W
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Parameter
................................................ 150 C/W
.................................................. 50 C/W
DD
+ 0.3V) to (GND – 5.0V)
Test Conditions
– 5V
DC Test
DC Test
V
V
Duty Cycle
t
Figure 1
Figure 1
Figure 1
Figure 1
V
V
DD
DD
IN
IN
Over operating temperature range with 4.5V
wise specified. Typical values are measured at T
300 sec
= 3V
= 0V
= 16V, I
= 16V
V
IN
O
V
2%
DD
= 10 mA T
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Operating Temperature Range
Power Dissipation (T
C Version ............................................... 0 C to +70 C
E Version .......................................... – 40 C to +85 C
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
T
– 40 C T
0 C
– 40 C T
V
T
0 C
– 40 C T
T
0 C
– 40 C T
T
0 C
– 40 C T
T
0 C
– 40 C T
3A HIGH-SPEED MOSFET DRIVERS
V
A
A
A
A
A
A
DD
DD
= 25 C
= 25 C
= 25 C
= 25 C
= 25 C
= 25 C
= 16V
= 16V
T
T
T
T
T
A
A
A
A
A
A
A
A
A
A
A
70 C
70 C
70 C
70 C
70 C
85 C
85 C
85 C
85 C
85 C
85 C
A
V
TELCOM SEMICONDUCTOR, INC.
DD
– 10
70 C)
Min
2.0
– 1
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 0.025
V
DD
A
Typ
= 25 C; V
2.7
3.3
3.3
3.0
0.5
0.1
20
22
24
20
22
24
35
40
40
35
40
40
—
—
—
—
—
—
—
16V, unless other-
0.025
Max
0.15
0.8
1.0
10
28
33
33
28
33
33
45
50
50
45
50
50
—
—
—
—
DD
1
4
5
5
=16V.
Unit
V
V
V
V
A
A
nsec
nsec
nsec
nsec
mA
A