TC1301B Microchip Technology, TC1301B Datasheet - Page 4

• Manufacturer Part Number: TC1301B
• Description: Dual LDO
• Manufacturer: Microchip Technology

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TC1301A/B
DC CHARACTERISTICS (CONTINUED)
DS21798B-page 4
Electrical Specifications: Unless otherwise noted, V
C
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Shutdown Supply Current
TC1301A
Shutdown Supply Current
TC1301B
Power Supply Rejection Ratio
Output Noise
Output Short-Circuit Current (Average)
V
V
SHDN Input High Threshold
SHDN Input Low Threshold
Wake-Up Time (From SHDN
mode), (V
Settling Time (From SHDN mode),
(V
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
Voltage Range
RESET Threshold
RESET Threshold Tempco
V
RESET Active Time-out Period
RESET Output Voltage Low
RESET Output Voltage High
Note 1:
OUT1
OUT2
DET
BYPASS
OUT2
RESET Delay
)
2:
3:
4:
5:
6:
7:
= 10 nF, SHDN > V
OUT2
Parameters
The minimum V
V
TCV
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
t = 10 ms.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its value
measured at a 1V differential.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., T
dissipation causes the device to initiate thermal shutdown
R
)
is defined as the higher of the two regulator nominal output voltages (V
OUT
= ((V
OUTmax
IN
IH
, T
has to meet two conditions: V
A
- V
= +25°C.
OUTmin
I
I
IN_SHDNA
IN_SHDNB
PSRR
I
I
V
T
V
Sym
OUTsc
OUTsc
t
t
V
T
V
V
t
V
V
RPD
RPU
eN
TH
WK
HYS
DET
t
OH
SD
TH
OL
S
IH
IL
/ T
) * 10
6
)/(V
V
Min
-1.4
-2.8
140
1.0
1.2
0.9
45
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DET
IN
OUT
= V
* T).
R
IN
+1V, I
Typ
830
200
140
150
180
300
0.1
5.3
58
58
50
10
30
—
—
—
—
—
—
—
2.7V and V
OUT1
.
Max
+1.4
+2.8
560
6.0
6.0
0.2
= I
90
15
20
—
—
—
—
—
—
—
—
—
—
—
1
OUT2
IN
A
, T
V
nV/(Hz)
= 100 µA, C
ppm/°C
R
J
Units
%V
%V
,
mA
mA
ms
+ V
µA
µA
dB
µs
µs
°C
°C
µs
%
%
V
V
V
JA
IN
IN
OUT1
DROPOUT
). Exceeding the maximum allowable power
½
SHDN2 = GND, V
SHDN1 = SHDN2 = GND
f
C
f
C
R
R
V
V
V
See Figure 5-1
V
See Figure 5-2
V
V
T
T
T
V
See Figure 5-3
V
I
V
I
See Figure 5-3
V
See Figure 5-3
SINK
SINK
or V
IN
A
A
A
IN
IN
IN
IN
IN
IN
DET
DET
DET
DET
IN
IN
LOAD1
LOAD2
100 Hz, I
1 kHz, I
= 0°C to +70°C
= -40°C to +125°C
= -40°C to +125°C
= 4.7 µF, C
= 2.7V to 6.0V
= 2.7V to 6.0V
= 5V, I
= 5V, I
= 5V, I
= 5V
= 0 µF
= 0 µF
.
OUT2
= 1.2 mA, See Figure 5-3.
= 100 µA for V
= V
> V
© 2005 Microchip Technology Inc.
= V
= V
LMAX
TH
THmax
).
TH
THmin
1
1
OUT1
OUT1
OUT1
OUT1
OUT1
to (V
- 100 mV to V
at V
Conditions
OUT1
, I
, I
= I
= I
= I
= I
TH
SINK
SOURCE
IN
= I
DET
OUT2
OUT2
OUT2
OUT2
= 6V for
– 100 mV),
DET
= C
OUT2
= 1.2 mA,
= OPEN
OUT2
= 30 mA,
= 50 mA,
= 100 µA
= 50 mA,
< 1.8V,
= 500 µA,
= 50 mA,
TH
= 1 µF,
+ 100 mV,