TC1014 TelCom Semiconductor, TC1014 Datasheet - Page 2

• Manufacturer Part Number: TC1014
• Description: 50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS
• Manufacturer: TelCom Semiconductor

TC1014-01-6/5/97
TC1014
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .................................................................7V
Output Voltage .................................. (– 0.3) to (V
Power Dissipation .................... Internally Limited (Note 7)
Operating Temperature .................... – 40 C < T
Storage Temperature ............................ – 65 C to +150 C
Maximum Voltage On Any Pin .......... V
ELECTRICAL CHARACTERISTICS:
Symbol
V
I
V
TCV
V
I
I
I
PSRR
I
eN
SHDN Input
V
V
NOTES: 1. V
.
OUT MAX
GND
IN
INSD
OUT SC
PRELIMINARY INFORMATION
V
V
V
IN
OUT
IN
IH
IL
OUT
OUT
OUT
– V
OUT
/ V
/V
/ P
OUT
OUT
2. TCV
3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load
4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
5. Ground pin current is the regulator pass transistor gate current. The total current drawn from the input supply is the sum of the load
6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
IN
D
range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the
thermal regulation specification.
differential.
current, ground current and supply current (i.e. I
or line regulation effects. Specifications are for a current pulse equal to I
thermal resistance from junction-to-air (i.e. T
initiate thermal shutdown. Please see Thermal Considerations section of this data sheet for more details.
R
is the regulator output voltage setting. V
Parameter
Input Operating Voltage
Maximum Output Current
Output Voltage
V
Line Regulation
Load Regulation
Dropout Voltage (Note 4)
Ground Pin Current
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
SHDN Input High Threshold
SHDN Input Low Threshold
OUT
OUT
= (V
Temperature Coefficient
OUT MAX
V
– V
OUT
OUT MIN
x
T
) x 10
IN
6
+ 0.3V to – 0.3V
R
Boldface type specifications apply for junction temperatures of – 40 C to +125 C.
V
= 2.5V, 2.7V, 3.0V, 3.3V, 5.0V.
A
IN
, T
J
= V
SHDN = V
Test Conditions
Note 1
Note 2
(V
I
(Note 3)
I
I
I
(Note 4)
I
SHDN = 0V
F
V
Note 6
I
470pF from Bypass to GND
V
V
IN
L
L
L
L
L
L
J
IN
< 125 C
RE
,
OUT
IN
IN
= 50mA
R
= 1.0mA to I
= 100 A
= 20mA
= I
= I
= I
OUT
+ 0.3)
JA
= 2.5V to 6.5V
= 2.5V to 6.5V
+ 1V) < V
OUT MAX,
OUT MAX
SUPPLY
). Exceeding the maximum allowable power dissipation causes the device to
= 0V
1kHz
+ 1V, I
IH
+ I
2
, I
L
(Note 5)
GND
IN
= 100 A, C
L
OUT MAX
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
= 0
< 6V
+ I
50mA CMOS LDO WITH SHUTDOWN
LOAD
LMAX
).
L
= 3.3 F, SHDN > V
at V
V
R
IN
Min
– 2.5% V
50
45
—
—
—
—
—
—
—
—
—
—
—
—
= 6V for T = 10msec.
AND REFERENCE BYPASS
R
IH
Typ
0.01
0.04
200
260
0.5
20
40
65
95
50
64
—
—
—
—
—
—
, T
5
0.5% V
A
= 25 C, unless otherwise noted.
R
Max
0.05
+ 2.5%
400
6.5
15
—
—
—
—
—
—
—
—
—
—
0
ppm/ C
nV/ Hz
Units
%V
%V
%/W
mA
mV
mA
dB
%
%
V
V
A
A
A
IN
IN