BTB1205I3 Cystech Electonics Corp, BTB1205I3 Datasheet - Page 5
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BTB1205I3
Manufacturer Part Number
BTB1205I3
Description
Low Vcesat PNP Epitaxial Planar Transistor
Manufacturer
Cystech Electonics Corp
Datasheet
1.BTB1205I3.pdf
(6 pages)
Recommended wave soldering condition
Recommended temperature profile for IR reflow
Time 25 °C to peak temperature
Time within 5°C of actual peak
BTB1205I3
−Temperature Min(T
−Temperature Max(T
−Time(ts
−Temperature (T
− Time (t
temperature(tp)
Time maintained above:
Peak Temperature(T
Average ramp-up rate
Ramp down rate
Pb-free devices
Profile feature
(Tsmax to Tp)
Product
Preheat
L
min
)
to ts
L
max
)
)
S
S
P
min)
max)
)
CYStech Electronics Corp.
Sn-Pb eutectic Assembly
Peak Temperature
3°C/second max.
6°C/second max.
60-120 seconds
60-150 seconds
6 minutes max.
10-30 seconds
260 +0/-5 °C
240 +0/-5 °C
100°C
150°C
183°C
3°C/second max.
6°C/second max.
5 +1/-1 seconds
Pb-free Assembly
60-180 seconds
60-150 seconds
8 minutes max.
Soldering Time
20-40 seconds
260 +0/-5 °C
CYStek Product Specification
www.DataSheet4U.com
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 5/ 6
150°C
200°C
217°C