STI4N62K3 ST Microelectronics, STI4N62K3 Datasheet - Page 4

• Manufacturer Part Number: STI4N62K3
• Description: SuperMESH3 Power MOSFET
• Manufacturer: ST Microelectronics

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
V
Symbol
Symbol
C
C
C
V
R
(BR)DSS
V
when V
C
o(er)
I
I
C
C
o(tr)
Q
Q
GS(th)
= 25 °C unless otherwise specified)
DS(on
R
DSS
GSS
Q
DS
oss
rss
iss
gs
gd
G
g
(1)
(2)
increases from 0 to 80% V
DS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
DSS
= 0)
Doc ID 17548 Rev 1
DSS
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 496 V, V
= 496 V, I
= 10 V
= ± 20 V
= V
= 10 V, I
Figure
Test conditions
Test conditions
GS
, I
3)
GS
D
D
D
= 50 µA
= 1.9 A
= 0
= 3.8 A,
GS
C
=125 °C
= 0
Min.
Min.
620
3
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
TBD
Typ.
3.75
450
1.8
60
10
14
STB/F/I/P4N62K3
www.DataSheet4U.com
Max.
Max.
± 10
1.95
4.5
oss
50
1
-
-
-
-
-
oss
when
Unit
Unit
µA
µA
µA
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Ω
V
V