BT258X Philips Semiconductors, BT258X Datasheet - Page 4

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BT258X

Manufacturer Part Number
BT258X
Description
Thyristors logic level
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
October 2002
Thyristors
logic level
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
2.5
1.5
0.5
GT
3
2
1
0
3
2
1
0
3
2
1
0
-50
-50
-50
(T
IL(25 C)
IH(25 C)
IGT(25 C)
IL(Tj)
IGT(Tj)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT150
Tj / C
Tj / C
Tj / C
50
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
100
0.01
10
0.1
10
1
10us
1
30
20
10
0
dVD/dt (V/us)
0
dV
Zth j-hs (K/W)
0
I T / A
T j = 125 C
T j = 25 C
D
Vo = 1 V
Rs = 0.04
/dt versus junction temperature T
0.1ms
0.5
without heatsink compound
pulse width t
1ms
50
tp / s
10ms
Tj / C
V T / V
1
P
D
typ
p
with heatsink compound
0.1s
.
BT258X series
100
Product specification
RGK = 100 ohms
max
t
p
1.5
1s
th j-hs
t
, versus
Rev 2.000
j
.
10s
150
2

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