BT136F-500G Philips Semiconductors, BT136F-500G Datasheet - Page 3

• Manufacturer Part Number: BT136F-500G
• Description: Triacs
• Manufacturer: Philips Semiconductors

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
February 1996
Triacs
Fig.1. Maximum on-state dissipation, P
j
SYMBOL PARAMETER
dV
dV
t
gt
on-state current, I
= 25 ˚C unless otherwise stated
Fig.2. Maximum permissible non-repetitive peak
D
com
8
7
6
5
4
3
2
1
0
/dt
1000
on-state current I
0
Ptot / W
100
/dt
10
10us
ITSM / A
sinusoidal currents, t
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
1
T2- G+ quadrant
100us
dI /dt limit
1
T(RMS)
T
TSM
2
IT(RMS) / A
, where
BT136
, versus pulse width t
BT136
1ms
T / s
3
I
T
Tj initial = 125 C max
p
= conduction angle.
T
20ms.
10ms
Ths(max) / C
4
120
90
60
30
tot
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
= 180
T(RMS)
TM
G
, versus rms
I TSM
j
DM
DM
com
time
= 125 ˚C; exponential
= 0.1 A; dI
= 6 A; V
= 67% V
= 400 V; T
/dt = 1.8 A/ms; gate
p
100ms
, for
= 4 A;
5
81
86.5
92
97.5
103
108.5
114
119.5
125
D
G
DRM(max)
= V
/dt = 5 A/ s
j
BT136F-
= 95 ˚C;
3
DRM(max)
V;
on-state current I
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current I
5
4
3
2
1
0
;
-50
30
25
20
15
10
IT(RMS) / A
5
0
1
ITSM / A
100
...
-
-
versus heatsink temperature T
sinusoidal currents, f = 50 Hz.
0
MIN.
...F
50
-
-
Number of cycles at 50Hz
10
TSM
, versus number of cycles, for
...G
200
BT136X
BT136
10
Ths / C
-
50
I
T
Tj initial = 125 C max
TYP.
250
50
100
BT136F series
2
Product specification
92 C
T
100
MAX.
hs
I TSM
-
-
-
time
.
Rev 1.100
T(RMS)
1000
UNIT
V/ s
V/ s
150
s
,