BAS19-V-G Vishay, BAS19-V-G Datasheet - Page 2

• Manufacturer Part Number: BAS19-V-G
• Description: Small Signal Switching Diodes, High Voltage
• Manufacturer: Vishay

BAS19-V-G, BAS20-V-G, BAS21-V-G
Vishay Semiconductors
Absolute Maximum Ratings
T
1)
2)
Thermal Characteristics
T
1)
Electrical Characteristics
T
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2
amb
amb
amb
Continuous reverse voltage
Repetitive peak reverse voltage
Non-repetitive peak forward
current
Non-repetitive peak forward
surge current
Maximum average forward
rectified current
DC forward current
Repetitive peak forward current
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage
Leakage current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
Measured under pulse conditions; Pulse time = T
Device on fiberglass substrate, see layout on next page
Device on fiberglass substrate, see layout on next page
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
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I
F
V
= I
(av. over any 20 ms period)
R
R
= V
V
= 30 mA, R
R
Test condition
I
I
V
F
F
Rmax.
I
= 0, f = 1 MHz
F
I
R
Test condition
rr
= 100 mA
= 200 mA
= 10 mA
= V
= 3 mA
t = 1 µs
Test condition
t = 1 s
, T
p
Rmax.
≤ 0.3 ms
j
= 150 °C
L
= 100 Ω,
Symbol
BAS19-V-G
BAS20-V-G
BAS21-V-G
BAS19-V-G
BAS20-V-G
BAS21-V-G
C
V
V
I
I
t
r
R
R
rr
tot
F
F
f
Symbol
Part
R
T
thJA
T
stg
j
[e-mail]
Min.
Symbol
V
V
V
I
I
I
I
F(AV)
P
FSM
FSM
FRM
V
V
V
RRM
RRM
RRM
I
F
tot
R
R
R
- 65 to + 150
430
Value
Typ.
150
5
1)
200
200
250
Value
100
150
200
120
200
250
625
2.5
0.5
Document Number 83390
1)
2)
2)
Max.
1.25
100
100
1.0
50
5
Rev. 1.0, 23-Nov-10
Unit
°C
°C
°C
Unit
mW
mA
mA
mA
V
V
V
V
V
V
A
A
Unit
nA
μA
pF
ns
Ω
V
V