MCR8DCN ON Semiconductor, MCR8DCN Datasheet - Page 3

• Manufacturer Part Number: MCR8DCN
• Description: Silicon Controlled Rectifiers Reverse Blocking Thyristors
• Manufacturer: ON Semiconductor

125
120
105
100
115
110
100
Symbol
V
I
V
I
V
I
1.0
0.1
DRM
RRM
H
10
DRM
RRM
TM
0
0
TYPICAL @ T
V
Figure 1. Average Current Derating
T
1.0
I
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 3. On−State Characteristics
T(AV)
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
1.0
a = 30°
, AVERAGE ON−STATE CURRENT (AMPS)
J
= 25°C
2.0
MAXIMUM @ T
2.0
3.0
60°
J
= 25°C
3.0
Voltage Current Characteristic of SCR
90°
MAXIMUM @ T
4.0
a = Conduction
120°
MCR8DCM, MCR8DCN
4.0
Angle
5.0
J
a
180°
http://onsemi.com
= 125°C
dc
6.0
5.0
I
Reverse Avalanche Region
RRM
Anode −
Reverse Blocking Region
3
at V
0.01
1.0
0.1
RRM
8.0
6.0
4.0
2.0
(off state)
10
0
0.1
0
a = Conduction
Figure 4. Transient Thermal Response
on state
Figure 2. On−State Power Dissipation
Angle
a = 30°
1.0
I
T(AV)
1.0
a
+ Current
, AVERAGE ON−STATE CURRENT (AMPS)
2.0
Forward Blocking Region
I
H
10
60°
t, TIME (ms)
V
TM
(off state)
3.0
I
DRM
100
90°
Z
qJC(t)
Anode +
4.0
at V
120°
= R
DRM
qJC(t)
1000
+ Voltage
5.0
Sr(t)
180°
dc
10 K
6.0