MCR69-2 ON, MCR69-2 Datasheet

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MCR69-2

Manufacturer Part Number
MCR69-2
Description
SILICON CONTROLLED RECTIFIERS
Manufacturer
ON
Datasheet

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MCR69-2, MCR69-3
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
(1) V DRM and V RRM for all types can be applied on a continuous basis. Ratings
(2) Ratings apply for t w = 1 ms. See Figure 1 for I TM capability for various
(3) Test Conditions: I G = 150 mA, V D = Rated V DRM , I TM = Rated Value,
MAXIMUM RATINGS
February, 2000 – Rev. 0
Peak Repetitive Off–State Voltage (1)
Peak Discharge Current (2)
On-State RMS Current
Average On-State Current
Peak Non-Repetitive Surge Current
Circuit Fusing Considerations
Forward Peak Gate Current
Forward Peak Gate Power
Forward Average Gate Power
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
Designed for overvoltage protection in crowbar circuits.
Reliability
High Discharge Current
Resistance and Maximum Power Dissipation and Durability
Glass-Passivated Junctions for Greater Parameter Stability and
Center-Gate Geometry for Uniform Current Spreading Enabling
Small Rugged, Thermowatt Package Constructed for Low Thermal
High Capacitor Discharge Current, 750 Amps
Device Marking: Logo, Device Type, e.g., MCR69–2, Date Code
Semiconductor Components Industries, LLC, 1999
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
duration of an exponentially decaying current waveform, t w is defined as
T J = 125 C.
5 time constants of an exponentially decaying current pulse.
(T J =
(180 Conduction Angles; T C = 85 C)
(180 Conduction Angles; T C = 85 C)
(1/2 Cycle, Sine Wave, 60 Hz,
T J = 125 C)
(t = 8.3 ms)
(t
(t
(t = 8.3 ms, T C = 85 C)
1.0 s, T C = 85 C)
1.0 s, T C = 85 C)
*
40 to +125 C, Gate Open)
Rating
(T J = 25 C unless otherwise noted)
MCR69–2
MCR69–3
I T(RMS)
Symbol
P G(AV)
V DRM,
V RRM
I T(AV)
I TSM
P GM
I GM
T stg
I TM
I 2 t
T J
– 40 to
– 40 to
Value
+125
+150
100
750
300
375
2.0
0.5
8.0
50
25
16
20
1
Amps
Amps
Amps
Amps
Amps
Watts
in. lb.
Volts
Unit
Watt
A 2 s
C
C
MCR69–2
MCR69–3
Device
1
2
3
4
ORDERING INFORMATION
25 AMPERES RMS
50 thru 100 VOLTS
A
PIN ASSIGNMENT
http://onsemi.com
1
TO220AB
TO220AB
CASE 221A
Package
TO–220AB
2
SCRs
STYLE 3
3
Publication Order Number:
Cathode
Anode
Anode
Gate
G
4
K
Shipping
500/Box
500/Box
MCR69/D

Related parts for MCR69-2

MCR69-2 Summary of contents

Page 1

... MCR69-2, MCR69-3 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 750 Amps Device Marking: Logo, Device Type, e.g., MCR69– ...

Page 2

... Ratings apply for ms. See Figure 1 for I TM capability for various durations of an exponentially decaying current waveform defined as 5 time constants of an exponentially decaying current pulse. (3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. MCR69–2, MCR69–3 Symbol R JC ...

Page 3

... Half Wave 4.0 8 T(AV) , AVERAGE ON-STATE CURRENT (AMPS) Figure 3. Current Derating MCR69–2, MCR69–3 + Current on state I RRM at V RRM Reverse Blocking Region (off state) Forward Blocking Region Reverse Avalanche Region Anode – 1.0 0.8 0.6 0.4 0 CASE TEMPERATURE ( C) Figure 2 ...

Page 4

... Volts 3 100 2.0 1.0 0.5 0.3 0.2 –60 –40 – JUNCTION TEMPERATURE ( C) Figure 6. Gate Trigger Current 3.0 2.0 1.0 0.8 0.5 0.3 –60 MCR69–2, MCR69–3 Z JC( r( 100 200 t, TIME (ms) Figure 5. Thermal Response 1.4 1.2 1.0 0.8 0.5 –60 –40 –20 80 100 120 140 Figure 7. Gate Trigger Voltage ...

Page 5

... MCR69–2, MCR69–3 PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z NOTES: SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI –T– PLANE Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL C BODY AND LEAD IRREGULARITIES ARE S ALLOWED ...

Page 6

... Notes MCR69–2, MCR69–3 http://onsemi.com 6 ...

Page 7

... Notes MCR69–2, MCR69–3 http://onsemi.com 7 ...

Page 8

... English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, England, Ireland MCR69–2, MCR69–3 CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor – ...

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