MCR218-10FP ON Semiconductor, MCR218-10FP Datasheet

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MCR218-10FP

Manufacturer Part Number
MCR218-10FP
Description
Silicon Controlled Rectifier
Manufacturer
ON Semiconductor
Datasheet
w w w . D a t a S h e e t 4 U . c o m
MCR218-6FP , MCR218-10FP
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
motor controls, heating controls and power supply crowbar circuits.
(1) V DRM and V RRM for all types can be applied on a continuous basis. Ratings
(2) The case temperature reference point for all T C measurements is a point on
MAXIMUM RATINGS
February, 2000 – Rev. 2
Peak Repetitive Off–State Voltage (1)
On-State RMS Current (T C = +70 C) (2)
Peak Nonrepetitive Surge Current
Circuit Fusing (t = 8.3 ms)
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
RMS Isolation Voltage (T A = 25 C,
Operating Junction Temperature
Storage Temperature Range
Designed primarily for half-wave ac control applications, such as
Parameter Uniformity and Stability
Resistance, High Heat Dissipation and Durability
Glass Passivated Junctions with Center Gate Fire for Greater
Small, Rugged, Thermowatt Constructed for Low Thermal
Blocking Voltage to 800 Volts
80 A Surge Current Capability
Insulated Package Simplifies Mounting
Device Marking: Logo, Device Type, e.g., MCR218–6, Date Code
Semiconductor Components Industries, LLC, 1999
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
the center lead of the package as close as possible to the plastic body.
(T J = –40 to +125 C, Sine Wave 50 to
60 Hz, Gate Open)
(180 Conduction Angles)
(1/2 Cycle, Sine Wave 60 Hz,
T J = 125 C)
(T C = +70 C, Pulse Width
(T C = +70 C, t = 8.3 ms)
(T C = +70 C, Pulse Width
Relative Humidity
Indicates UL Registered — File #E69369
Rating
p
MCR218–6FP
MCR218–10FP
(T J = 25 C unless otherwise noted)
20%)
Preferred Device
v
v
( )
1.0 s)
1.0 s)
I T(RMS)
Symbol
P G(AV)
V DRM,
V RRM
V (ISO)
I TSM
P GM
I GM
T stg
I 2 t
T J
–40 to
–40 to
Value
1500
+125
+150
400
800
100
8.0
5.0
0.5
2.0
26
1
Amps
Amps
Watts
Amps
Volts
Volts
Unit
Watt
A 2 s
C
C
Preferred devices are recommended choices for future use
and best overall value.
MCR218–6FP
MCR218–10FP
Device
1
2
3
ORDERING INFORMATION
400 thru 800 VOLTS
ISOLATED TO–220 Full Pack
8 AMPERES RMS
ISOLATED SCRs
A
PIN ASSIGNMENT
http://onsemi.com
1
2
ISOLATED TO220FP
ISOLATED TO220FP
3
CASE 221C
STYLE 2
Package
Publication Order Number:
Cathode
Anode
Gate
G
K
MCR218FP/D
(
Shipping
500/Box
500/Box
)

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MCR218-10FP Summary of contents

Page 1

... MCR218-6FP , MCR218-10FP Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal ...

Page 2

... Turn-Off Time ( Rated V DRM , DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (Gate Open Rated V DRM , Exponential Waveform) (1) Pulse Test: Pulse Width = 1 ms, Duty Cycle MCR218–6FP, MCR218–10FP Characteristic ( unless otherwise noted.) Characteristic 125 C ...

Page 3

... I T(AV) , AVERAGE ON-STATE FORWARD CURRENT (AMPS) Figure 1. Current Derating MCR218–6FP, MCR218–10FP Voltage Current Characteristic of SCR I RRM at V RRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode – CONDUCTION ANGLE dc 90 120 ...

Page 4

... F , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Maximum On-State Characteristics 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 MCR218–6FP, MCR218–10FP 125 2.8 3.6 4.4 5 TIME (ms) Figure 5. Thermal Response http://onsemi.com 4 1 CYCLE SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT ...

Page 5

... JUNCTION TEMPERATURE ( C) www.DataSheet4U.com Figure 6. Typical Gate Trigger Current versus Temperature MCR218–6FP, MCR218–10FP 1.6 1.2 0.8 0 100 120 140 –60 2 1.6 1.2 0.8 0.4 0 –60 –40 – JUNCTION TEMPERATURE ( C) Figure 8. Typical Holding Current versus Temperature http://onsemi ...

Page 6

... Q H –Y– MCR218–6FP, MCR218–10FP PACKAGE DIMENSIONS ISOLATED TO–220 Full Pack CASE 221C–02 ISSUE C SEATING –T– PLANE –B– 0.25 (0.010 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

Page 7

... Notes www.DataSheet4U.com MCR218–6FP, MCR218–10FP http://onsemi.com 7 ...

Page 8

... Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, England, Ireland MCR218–6FP, MCR218–10FP are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) ASIA/PACIFIC: LDC for ON Semiconductor – ...

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