MMBT4403L-AE3-R Unisonic Technologies, MMBT4403L-AE3-R Datasheet - Page 2

• Manufacturer Part Number: MMBT4403L-AE3-R
• Description: Pnp General Purpose Amplifier
• Manufacturer: Unisonic Technologies

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25℃
Junction Temperature
Storage Temperature
MMBT4403
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Thermal Resistance, Junction to Ambient
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage (Note)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
ON CHARACTERISTICS*
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note: Pulse test: Pulse Width≤300µs, Duty Cycle≤2%
ELECTRICAL CHARACTERISTICS
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
cycle operations.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
CHARACTERISTIC
PARAMETER
(Ta=25℃, unless otherwise specified)
SYMBOL
V
V
V
V
BV
BV
BV
CE(SAT2
BE(SAT2
CE(SAT1)
BE(SAT1)
Ceb
h
h
h
h
h
Ccb
I
I
h
h
h
CEX
h
BEX
t
t
t
FE1
FE2
FE3
FE4
FE5
f
t
RE
OE
FE
CEO
CBO
T
D
R
S
F
EBO
IE
) I
) I
I
Ic=-0.1mA, I
I
V
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
I
C
E
C
C
C
C
B1
CE
CE
CE
CE
CE
CE
CE
CE
CB
BE
CE
CE
CE
CE
CC
CC
=-1mA, I
=-0.1mA, I
=-150mA, I
=-500mA, I
=-150mA, I
=-500mA, I
= I
(Ta=25℃, unless otherwise specified)
=-0.5V, I
=-35V, V
=-35V, V
=-1V,I
=-1V,I
=-1V,I
=-2V, I
=-2V, I
=-10V, I
=-10V, I
=-10V, I
=-10V, I
=-10V, I
=-10V, I
=-30V, I
=-30V, I
(Ta=25℃, unless otherwise specified)
B2
TEST CONDITIONS
=-15mA
C
C
C
B
C
C
=-0.1mA
=-1mA
=-10mA
=0
=-150mA (Note)
=-500mA (Note)
C
E
C
C
C
C
C
C
E
C
C
EB
BE
=-20mA, f=100MHz
=0, f=140kHz
=-1mA, f=1kHz
=-1mA, f=1kHz
=-1mA, f=1kHz
=-1mA, f=1kHz
=-150mA I
=-150mA
B
B
B
B
=0
=0
=0, f=140kHz
=-15mA
=-50mA
=-15mA(Note)
=-50mA
SYMBOL
=-0.4V
=-0.4V
SYMBOL
V
V
V
T
P
T
CBO
CEO
θ
EBO
I
STG
C
C
J
JA
B1
=-15mA
PNP SILICON TRANSISTOR
Ｆ Ｏ Ｒ
文 件 管 理 中 心
UTC
發
-55 ~ +150
RATINGS
-0.75
JUL 17.2007
MIN
RATINGS
100
100
200
-40
-40
1.5
0.1
1.0
30
60
20
60
-5
Doc.Control
+150
-600
350
-40
-40
2.8
357
-5
Ｉ Ｓ Ｓ Ｕ Ｅ
TYP
Center
-0.75
-0.95
MAX
-0.1
-0.1
-0.4
-1.3
300
500
100
225
8.5
30
15
15
20
30
行
8
QW-R206-034.D
mW/℃
UNIT
UNIT
℃/W
mW
µmbos
mA
UNIT
℃
℃
×10
MHz
2 of 5
V
V
V
kΩ
µA
µA
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
-4