MMBT5401L-X-AE3-R Unisonic Technologies, MMBT5401L-X-AE3-R Datasheet - Page 3

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MMBT5401L-X-AE3-R

Manufacturer Part Number
MMBT5401L-X-AE3-R
Description
Pnp Silicon Transistor
Manufacturer
Unisonic Technologies
Datasheet
■ TYPICAL CHARACTERICS
MMBT5401
UNISONIC TECHNOLOGIES CO., LTD
-10
-10
www.unisonic.com.tw
-10
-10
10
10
10
10
20
16
12
8
4
0
Fig.1 Collector Output Capacitance
3
2
0
3
2
1
0
1
-10
-10
0
0
-1
Fig.3 Base-Emitter on Voltage
Fig.5 Current Gain-Bandwidth
Collector-Base Voltage, V
Base-Emitter Voltage, V
Collector Current, Ic (mA)
-0.2
-10
0
-0.4
Product
V
-10
CE
-10
1
=-5V
1
f=1MHz
V
I
E
CE
-0.6
=0
=-10V
-10
2
BE
-0.8
CB
(V)
(V)
-10
-10
-1.0
3
2
10
10
10
10
-10
-10
-10
-10
3
0
2
1
-2
1
0
-10
-1
-10
-1
-1
Collector Current, Ic (mA)
Ic=10*I
Fig.2 DC Current Gain
PNP SILICON TRANSISTOR
Fig.4 Saturation Voltage
Collector Current, Ic (mA)
-10
-10
0
0
B
V
V
CE
-10
BE
(SAT)
-10
1
(SAT)
1
V
CE
=-5V
-10
-10
2
2
-10
-10
QW-R206-011.E
3
3
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