MMBT2369AL ON Semiconductor, MMBT2369AL Datasheet

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MMBT2369AL

Manufacturer Part Number
MMBT2369AL
Description
Switching Transistors
Manufacturer
ON Semiconductor
Datasheet

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MMBT2369LT1,
MMBT2369ALT1
Switching Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 5
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Pb−Free Packages are Available
(Note 1) T
Derate above 25°C
Substrate, (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
MMBT2369ALT1 is a Preferred Device
A
= 25°C
Symbol
Symbol
T
V
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
CES
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
200
225
556
300
417
4.5
1.8
2.4
15
40
40
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MMBT2369LT1
MMBT2369LT1G
MMBT2369ALT1
MMBT2369ALT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
Device
1
ORDERING INFORMATION
BASE
MARKING DIAGRAMS
xxx = M1J or 1JA
M
G
http://onsemi.com
1
2
= Date Code*
= Pb−Free Package
1
COLLECTOR
3
(Pb−Free)
(Pb−Free)
EMITTER
Package
SOT−23
SOT−23
SOT−23
SOT−23
xxx M G
Publication Order Number:
3
2
G
CASE 318
STYLE 6
SOT−23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MMBT2369LT1/D
Shipping

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MMBT2369AL Summary of contents

Page 1

... MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 25° ...

Page 2

... Turn−On Time (V = 3.0 Vdc mAdc 3.0 mAdc Turn−Off Time (V = 3.0 Vdc mAdc 3.0 mAdc Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MMBT2369LT1, MMBT2369ALT1 (T = 25°C unless otherwise noted) A Symbol MMBT2369A MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A ...

Page 3

... PULSE GENERATOR V RISE TIME < SOURCE IMPEDANCE = ≥ 300 ns DUTY CYCLE < 2% Figure 5. Turn−On and Turn−Off Time Test Circuit MMBT2369LT1, MMBT2369ALT1 +10. −9. < PULSE WIDTH (t DUTY CYCLE = 2% +11 −8 < ...

Page 4

... MMBT2369LT1, MMBT2369ALT1 25° 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) Figure 6. Junction Capacitance Variations C < C OPT C C OPT TIME Figure 8. Turn−Off Waveform 100 LIMIT TYPICAL 5.0 10 Figure 7. Typical Switching Times − ...

Page 5

... MMBT2369LT1, MMBT2369ALT1 1.0 0 0.6 0.4 0.2 0.02 0.05 0.1 Figure 10. Maximum Collector Saturation Voltage Characteristics 200 100 Figure 11. Minimum Current Gain Characteristics 1.4 β 1.2 J 1.0 0.8 0.6 0.4 0 0.2 0 BASE CURRENT (mA 125°C J 75°C 25°C −15°C −55°C ...

Page 6

... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MMBT2369LT1, MMBT2369ALT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1 ...

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