MMBT2907Q SeCoS Halbleitertechnologie GmbH, MMBT2907Q Datasheet - Page 3

• Manufacturer Part Number: MMBT2907Q
• Description: Pnp Silicon General Purpose Transistor
• Manufacturer: SeCoS Halbleitertechnologie GmbH

01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com
–1.0
–0.8
–0.6
–0.4
–0.2
8.0
6.0
4.0
2.0
7.0
5.0
3.0
2.0
10
30
20
10
–0.1
0
0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
0.01
0.02 0.05 0.1 0.2
T J = 25 C
Elektronische Bauelemente
–0.2 –0.3 –0.5
Figure 7. Frequency Effects
Figure 11. “On” Voltage
Figure 9. Capacitances
I C = –1.0 mA, R s = 430
–500 A, R s = 560
–50 A, R s = 2.7 k
–100 A, R s = 1.6 k
Reverse Voltage (VOLTS)
V CE(sat) @ I C /I B = 10
I C , Collector Current (mA)
–1.0
f, Frequency (kHz)
V BE(sat) @ I C /I B = 10
R s = OPTIMUM SOURCE RESISTANCE
0.5 1.0 2.0
C eb
–2.0 –3.0 –5.0
TYPICAL SMALL– SIGNAL CHARACTERISTICS
V BE(on) @ V CE = –10 V
5.0 10
–50 –100 –200
–10
20
V CE = 10 Vdc, T A = 25 C
–20 –30
50 100
C cb
NOISE FIGURE
–500
+0.5
–0.5
–1.0
–1.5
–2.0
–2.5
400
300
200
100
8.0
6.0
4.0
2.0
10
80
60
40
30
20
–0.1 –0.2 –0.5 –1.0 –2.0
0
–1.0 –2.0
0
50
Figure 10. Current–Gain — Bandwidth Product
100
General Purpose Transistor
Figure 8. Source Resistance Effects
Figure 12. Temperature Coefficients
f = 1.0 kHz
MMBT2907Q
200
V CE = –20 V
T J = 25 C
–5.0
Any changing of specification will not be informed individual
R s , Source Resistance (OHMS)
PNP Silicon
I C = –50 A
–100 A
–500 A
–1.0 mA
–10
500 1.0 k 2.0 k
I C , Collector Current (mA)
I C , Collector Current (mA)
R
–20
q
–5.0 –10 –20
VC for V CE(sat)
R
q
VB for V BE
–50 –100 –200
5.0 k 10 k
–50 –100 –200 –500
20 k
–500 –1000
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50 k