MMBT2907AGH Zowie Technology Corporation, MMBT2907AGH Datasheet - Page 2

• Manufacturer Part Number: MMBT2907AGH
• Description: General Purpose Transistor Pnp Silicon
• Manufacturer: Zowie Technology Corporation

REV. 0
(3) Pulse Test : Pulse Width
(4) fT is defined as the frequency at which hfe extrapolates to unity.
ELECTRICAL CHARACTERISTICS (T
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTIC
SWITCHING CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-On Time
Storage Time
Fall Time
( I
( I
( I
( I
( I
( I
( I
( I
( I
( I
( V
( V
C
C
C
C
C
C
C
C
C
C
0
CB
EB
-16V
Zowie Technology Corporation
= -0.1 mAdc, V
= -1.0 mAdc, V
= -10 mAdc, V
= -150 mAdc, V
= -500 mAdc, V
= -150 mAdc, I
= -500 mAdc, I
= -150 mAdc, I
= -500 mAdc, I
= -50 mAdc, V
Figure 1. Delay and Rise Time Test Circuit
INPUT
Z
PRF = 150PPS
RISE TIME 2.0nS
P.W. < 200nS
= -10 Vdc, I
= -2.0 Vdc, I
O
= 50
200 ns
E
C
CE= -
CE
B
B
B
B
CE= -
CE= -
=0, f=1.0 MH
Characteristic
CE= -
CE= -
=0, f=1.0 MH
( V
( V
= -15 mAdc )
= -50 mAdc )
= -15 mAdc )
= -50 mAdc )
= -20 Vdc, f=100 MH
I
I
B1
B1
300 uS, Duty Cycle
CC
CC
10 Vdc )
50
= -15 mAdc )
=I
10 Vdc )
10 Vdc )
10 Vdc )
10 Vdc )
= -30 Vdc, I
= -6.0 Vdc, I
1.0 k
B2= -
(3)
(3),(4)
15 mAdc )
Z
(3)
Z
(3)
(3)
)
)
-30 V
C
200
C
= -150 mAdc,
TO OSCILLOSCOPE
RISE TIME 5.0nS
A
= -150 mAdc,
=25
2.0%.
Z
)
o
C unless otherwise noted) (Continued)
0
-30 V
V
V
Symbol
CE
BE
C
INPUT
Z
PRF = 150PPS
RISE TIME 2.0nS
P.W. < 200nS
C
H
ton
toff
O
f
td
obo
ts
tr
tf
ibo
FE
(sat)
(sat)
T
= 50
200 ns
Figure 2. Storage and Fall Time Test Circuit
Min.
100
100
100
200
75
50
-
-
-
-
-
-
-
-
-
-
-
-
50
1.0 k
+15 V
MMBT2907AGH
1.0 k
1N916
Max.
300
-0.4
-1.6
-1.3
-2.6
100
8.0
-6.0V
Zowie Technology Corporation
30
45
10
40
80
30
-
-
-
-
-
37
TO OSCILLOSCOPE
RISE TIME 5.0nS
MH
Unit
Vdc
Vdc
nS
nS
pF
pF
-
Z