MMBTH10L ON Semiconductor, MMBTH10L Datasheet

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MMBTH10L

Manufacturer Part Number
MMBTH10L
Description
Vhf/uhf Transistor Npn Silicon
Manufacturer
ON Semiconductor
Datasheet

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MMBTH10LT1,
MMBTH10−4LT1
VHF/UHF Transistor
NPN Silicon
Features
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
December, 2003 − Rev. 2
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
Device Marking:
Pb−Free Lead Finish
Device Marking: 3EM
Pb−Free Package May be Available. The G−Suffix Denotes a
Semiconductor Components Industries, LLC, 2003
FR−5 Board (Note 1)
T A = 25 C
Derate above 25 C
Junction to Ambient (Note 1)
Alumina Substrate (Note 2)
T A = 25 C
Derate above 25 C
Junction to Ambient (Note 2)
Temperature Range
Characteristic
Rating
Preferred Devices
Symbol
Symbol
T J , T stg
V CEO
V CBO
V EBO
R JA
R JA
P D
P D
−55 to
Value
+150
Max
225
556
300
417
3.0
1.8
2.4
25
30
1
mW/ C
mW/ C
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
C/W
C/W
C
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MMBTH10LT1
MMBTH10LT1G
MMBTH10−4LT1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
ORDERING INFORMATION
http://onsemi.com
BASE
1
1
(Pb−Free)
Package
CASE 318
SOT−23
SOT−23
SOT−23
STYLE 6
SOT−23
COLLECTOR
EMITTER
2
Publication Order Number:
3
2
3
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MMBTH10LT1/D
Shipping †

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MMBTH10L Summary of contents

Page 1

... Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MMBTH10LT1/D ...

Page 2

... C = 4.0 mAdc Vdc 100 MHz) Collector−Base Capacitance ( Vdc 1.0 MHz) Common−Base Feedback Capacitance ( Vdc 1.0 MHz) Collector Base Time Constant ( 4.0 mAdc Vdc 31.8 MHz) MMBTH10LT1, MMBTH10−4LT1 ( unless otherwise noted) Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO ...

Page 3

... MMBTH10LT1, MMBTH10−4LT1 COMMON−BASE y PARAMETERS versus FREQUENCY ( Vdc 4.0 mAdc − 100 200 300 400 500 f, FREQUENCY (MHz) Figure 1. Rectangular Form FORWARD TRANSFER ADMITTANCE − −10 − ...

Page 4

... MMBTH10LT1, MMBTH10−4LT1 COMMON−BASE y PARAMETERS versus FREQUENCY ( Vdc 4.0 mAdc REVERSE TRANSFER ADMITTANCE 5.0 4.0 3.0 −b rb 2.0 1.0 0 100 200 300 400 f, FREQUENCY (MHz) Figure 5. Rectangular Form 10 9.0 8.0 7.0 6.0 5 4.0 3.0 2.0 1.0 0 100 200 300 400 f, FREQUENCY (MHz) Figure 7. Rectangular Form TYPICAL CHARACTERISTICS 0 − ...

Page 5

... MMBTH10LT1, MMBTH10−4LT1 PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE SOLDERING FOOTPRINT* 0.95 0.037 0.9 0.035 0.8 0.031 Figure 9. SOT−23 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D ...

Page 6

... P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MMBTH10LT1, MMBTH10−4LT1 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2− ...

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