1N4454-1 Microsemi Corporation, 1N4454-1 Datasheet

1N4454-1

Manufacturer Part Number

1N4454-1

Description

Silicon Switching Diode Do-35 Glass Package

Manufacturer

Microsemi Corporation

Datasheet

1.1N4454-1.pdf (2 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

1N4454-1JANTX

Manufacturer:

Microsemi

Quantity:

1 400

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

1N4454-1JANTXV

Quantity:

1 400

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Silicon Switching Diode

Maximum Ratings

Electrical Characteristics @ 25

Features

Peak Inverse Voltage @ 5µA & 0.1µA @ -55

Average Rectified Current

Continuous Forward Current

Peak Surge Current (t

Power Dissipation T

Operating Temperature Range

Storage Temperature Range

Breakdown Voltage @ I

Reverse Leakage Current @ V

Capacitance @ V

Reverse Recovery Time (note 1)/(note 2)

Forward Recovery Voltage (note 3)

Note 1: Per Method 4031-A with I

Note 2: Per Method 4031-A with I

Note 3: Per Method 4026 with I

tition Rate = 5 - 100 KHz.

Forward Voltage @ I

Applications

Reverse Leakage Current @ V

* Unless Otherwise Specified

Used in general purpose applications,

speed are important.

Six sigma quality

Metallurgically bonded

BKC's Sigma Bond™ plating

for problem free solderability

LL-34/35 MELF SMD available

Full approval to Mil-S-19500 /144

Available up to JANTXV-1 levels

"S" level screening available to Source Control Drawings

where performance and switching

= 0 V, f = 1mHz

= 50

peak

= 10 mA

= 1 sec.)

= 5 µA

C, L = 3/8" from body

= 100 mA, R

= I

= 10 mA, R

= 50 V

= 50 V, T=150

= 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe-

1N4454-1

= 100 Ohms, Vr = 6 V, Recover to 1.0 mA.

1N4454,

Tel: 978-681-0392 - Fax: 978-681-9135

6 Lake Street - Lawrence, MA 01841

= 100 Ohms, C = 3 Pf.

25.4 mm

(Min.)

1.0"

Symbol

PIV

Symbol

DO-35 Glass Package

PIV

0.120-.200"

3.05-5.08-

peak

Length

Fdc

Avg

tot

DO-35 Glass Package

m m

200

-65 to +200

Limits

1.0(max)

75 (min)

0.1 (max)

100 (max)

2.0 (max)

2.0/4.0 (max)

3.0 (max)

75 (Min.)

Value

0 . 4 5 8 - 0 . 5 5 8 m m

200

300

1.0

500

0 . 0 1 8 - 0 . 0 2 2 "

L e a d D i a .

1 . 5 3 - 2 . 2 8 m m

0.06-0.09"

Dia.

mAmps

mWatts

Volts

nSecs

Amp

Volts

µA

Unit

Related parts for 1N4454-1

1N4454-1 Summary of contents

Page 1

... Reverse Recovery Time (note 1)/(note 2) Forward Recovery Voltage (note 3) Note 1: Per Method 4031-A with I Note 2: Per Method 4031-A with I Note 3: Per Method 4026 with I F tition Rate = 5 - 100 KHz. * Unless Otherwise Specified 1N4454, 1N4454-1 1.0" 25.4 mm (Min 3/8" from body o ...

Page 2

DO-35 DERATING (175 C Tj) DO-35 POWER DERATING CURVE 500 400 300 200 100 100 120 Temperature ( 3/8" from body Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 ...

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