DG213 TEMICs, DG213 Datasheet - Page 2

• Manufacturer Part Number: DG213
• Description: Quad Complementary CMOS Analog Switch
• Manufacturer: TEMICs

Absolute Maximum Ratings
Voltages Referenced to V–
V+
GND
Digital Inputs
Current, Any Terminal
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max)
Storage Temperature
DG213
2
Specifications
Analog Switch
Analog Signal Range
Drain-Source On-Resistance
r
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel On Capacitance
Off Isolation
Channel-to-Channel Crosstalk
DS(on)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Match
Parameter
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . .
d
. . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
or 30 mA, whichever occurs first
. . . . . . . . . . . . . . . . . . .
V
INH
Symbol
ANALOG
r
C
X
C
C
I
OIRR
I
I
DS(on)
V
V
r
t
S(off)
D(off)
D(on)
C
t
DS(on)
S(off)
D(off)
D(on)
TALK
OFF
ON
t
INH
INL
or I
Q
D
IN
(V–) –2 V to (V+) +2 V
INL
C
Unless Otherwise Specified
L
V
–65 to 125 C
V
V
V
V
= 1000 pF, V
V
L
V
V
V
V+ = 15 V, V– = –15 V
S
D
S
D
C
= 5 V, V
D
D
S
V
V
=
L
L
= 1 V
=
= V
Test Conditions
100 mA
= 10 V, See Figure 3
S
S
=
V
30 mA
= 15 pF, R
1 V
V
= 0 V f = 1 MHz
= 0 V, f = 1 MHz
S
S
See Figure 2
44 V
25 V
15 V V
14 V, V
S
14 V, V
INH
= V
V
RMS
10 V, I
= 0 V, f = 1 MHz
IN
S
S
p ,
Fi
= 2 V
D
or V
= 2.4 V, 0.8 V
g
, f = 100 kHz
,
= 0 V, R
= 14 V
f
D
S
L
L
S
S
Power Dissipation (Package)
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin TSSOP
Notes:
a.
b. All leads welded or soldered to PC Board.
c.
d. Derate 7.6 mW/ C above 75 C
INL
=
=
= 50
= 1 mA
2
100 kH
15 V
Signals on S
by internal diodes. Limit forward diode current to maximum
current ratings.
Derate 6.5 mW/ C above 75 C
14 V
14 V
g
= 0
e
d
X
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, D
c
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
X
, or IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
a
b
X
Min
exceeding V+ or V– will be clamped
–0.5
–0.5
–0.5
–10
V–
2.4
–5
–5
–1
20
S-56461—Rev. C, 29-Dec-97
c
–40 to 85 C
D Suffix
Typ
45
85
55
25
16
90
95
0.01
0.01
0.02
1
5
1
5
5
b
Max
130
100
V+
0.5
0.5
0.5
0.8
60
85
10
2
5
5
1
Siliconix
c
470 mW
640 mW
500 mW
Unit
nA
pC
dB
dB
pF
pF
ns
V
V
V
A