BR35H160FVM-WC ROHM Co. Ltd., BR35H160FVM-WC Datasheet - Page 2

• Manufacturer Part Number: BR35H160FVM-WC
• Manufacturer: ROHM Co. Ltd.

Output Leakage Current
◇MEMORY CELL CHARACTERISTICS(Vcc=2.5～5.5V)
Write/Erase Cycle
Data Retention
○Initial Data：Memory array FFh
◇DC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-40～125℃, Vcc=2.5～5.5V)
“H” Input Voltage
“L” Input Voltage
“L” Output Voltage
“H” Output Voltage
Input Leakage Current
Operating Current
Write
Operating Current
Read
Standby Current
CSB
GND
○This product is not designed for protection against
○radioactive rays.
◇ BLOCK DIAGRAM
NC
SO
Parameter
1
2
3
4
Parameter
Symbol
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
VIH1
VOH
ICC1
ICC2
ICC3
ICC4
VIL1
VOL
ILO
ISB
ILI
*1
*1
INSTRUCTION
REGISTER
0.7xVcc
Vcc-0.5
-0.3
Min.
-10
-10
－
－
－
－
－
Specification
0
1,000,000
500,000
300,000
Min.
Typ.
40
20
－
－
－
－
－
－
－
－
－
－
－
Vcc+0.3
0.3xVcc
Max.
Vcc
0.4
1.5
10
10
10
2
3
2
Fig.1 BLOCK DIAGRAM
Specification
ADDRESS
REGISTER
DATA
REGISTER
Unit
μA
μA
μA
mA
mA
mA
mA
Typ.
V
V
V
V
-
-
-
-
-
WRITE
INHIBITION
2.5V≦Vcc≦5.5V
2.5V≦Vcc≦5.5V
IOL=2.1mA (Vcc=2.5V～5.5V)
IOH=-0.4mA (Vcc=2.5V～5.5V)
VIN=0V～Vcc
VOUT=0V～Vcc , CSB=Vcc
Vcc=2.5V , fSCK=5MHz , tE/W=5ms
Byte Write，Page Write
Vcc=5.5V , fSCK=5MHz , tE/W=5ms
Byte Write，Page Write
Vcc=2.5V , fSCK=5MHz
Read，Read Status Register
Vcc=5.5V , fSCK=5MHz
Read，Read Status Register
Vcc=5.5V
CSB=Vcc
SCK=SI=Vcc or GND, SO=OPEN
VOLTAGE
DETECTION
11bit
8bit
Max.
-
-
-
-
-
test condition
READ/WRITE
ADDRESS
DECODER
*1 Not 100% TESTED
AMP
HIGH VOLTAGE
GENERATOR
Cycle
Cycle
Cycle
Year
Year
Unit
REV. B
11bit
8bit
Ta≦105℃
Ta≦125℃
Ta≦125℃
Ta≦85℃
Ta≦25℃
Condition
Test
STATUS REGISTER
16,384bit
EEPROM
◇AC OPERATING CHARACTERISTICS
SCK clock Frequency
SCK High Time
SCK Low Time
CS High Time
CS Setup Time
CS Hold Time
SCK Setup Time
SCK Hold Time
SI Setup Time
SI Hold Time
Output Data Delay Time1
Output Data Delay Time2 (CL=30pF)
Output Hold Time
Output Disable Time
SCK Rise Time
SCK Fall Time
Output Rise Time
Output Fall Time
Write Cycle Time
(Unless otherwise specified Ta=-40～125℃, C
Parameter
8 VCC
7 NC
6 SCK
5 SI
*1
*1
*1
*1
tSCKWH
tSCKWL
Symbol
tSCKS
tSCKH
fSCK
tCSS
tCSH
tE/W
tPD1
tPD2
tDIS
tDIH
tOH
tOZ
tRC
tRO
tCS
tFC
tFO
◇PIN No. / PIN NAME
※1 Not 100% TESTED
PIN No.
Min.
2.5V≦VCC≦5.5V
－
85
85
85
90
85
90
90
20
30
－
－
－
－
－
1
2
3
4
5
6
7
8
-
-
0
-
L
Typ.
=100pF)
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
PIN NAME
Max.
100
GND
VCC
－
－
－
－
－
－
－
－
－
70
55
－
50
50
CSB
SCK
5
1
1
5
SO
NC
NC
SI
MHz
Unit
μs
μs
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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