GP200MKS12 Dynex Semiconductor, GP200MKS12 Datasheet - Page 7

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GP200MKS12

Manufacturer Part Number
GP200MKS12
Description
IGBT Chopper Module Preliminary Information
Manufacturer
Dynex Semiconductor
Datasheet
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
320
280
240
200
160
120
450
400
300
250
200
150
100
500
350
80
40
50
0
0
0
Fig. 13 DC current rating vs case temperature
0
T
V
R
*Recommended minimum value
Fig. 11 Forward bias safe operating area
10
case
ge
g
= 4.7 *
= 15V
20
= 125˚C
200
30
Collector-emitter voltage, V
Case temperature, T
40
400
50
RBSOA
60
600
70
80
case
800
90 100 110 120 130
- (˚C)
ce
- (V)
1000
1200
1000
100
10
0.001
1
Fig. 12 Transient thermal impedance
0.01
Pulse width, t
0.1
p
- (s)
GP200MLK12
Antiparallel diode
1
Transistor
7/10
10

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