RC28F640P33B85 Numonyx, RC28F640P33B85 Datasheet - Page 30

• Manufacturer Part Number: RC28F640P33B85
• Description: Numonyx? Strataflash Embedded Memory
• Manufacturer: Numonyx

7.2
Table 16: Capacitance
7.3
Table 17: AC Read Specifications - 130nm (Sheet 1 of 3)
Datasheet
30
Notes:
1.
2.
3.
Asynchronous Specifications
Latching Specifications
Symbol
Num
C
R10
R11
R12
R13
R15
R16
R17
C
R1
R2
R3
R4
R5
R6
R7
R8
R9
OUT
IN
Capacitance values are for a single die; for dual die, the capacitance values are doubled.
Sampled, not 100% tested.
Silicon die capacitance only, add 1 pF for discrete packages.
Output Capacitance
Symbol
Input Capacitance
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
GHQZ
AVQV
GLQV
PHQV
GLQX
EHQZ
GHTZ
AVAV
ELQV
ELQX
t
EHEL
EHTZ
GLTV
GLTX
ELTV
Parameter
OH
Capacitance
AC Read Specifications
Read cycle time
Address to output valid
CE# low to output valid
OE# low to output valid
RST# high to output valid
CE# low to output in low-Z
OE# low to output in low-Z
CE# high to output in high-Z
OE# high to output in high-Z
Output hold from first occurring address, CE#, or OE#
change
CE# pulse width high
CE# low to WAIT valid
CE# high to WAIT high-Z
OE# low to WAIT valid
OE# low to WAIT in low-Z
OE# high to WAIT in high-Z
CE#, WE#, OE#,
Address, Data,
ADV#, WP#
RST#, CLK,
Data, WAIT
Signals
Parameter
Min
2
2
Typ
6
4
256/512M
256/512M
256/512M
Max
Numonyx™ StrataFlash
TSOP
TSOP
TSOP
7
5
Unit
pF
pF
Min
85
95
20
0
0
0
0
-
-
-
-
-
-
-
-
-
-
V
V
Max temp = 85 °C,
Typ temp = 25 °C,
CCQ
Discrete silicon die
CC
®
= (0 V - 3.6 V),
Max
Condition
= (0 V - 3.6 V),
150
85
95
85
95
25
24
24
17
20
17
20
Embedded Memory (P33)
-
-
-
-
-
-
Order Number: 314749-05
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
November 2007
Notes
1,2,3
1,3
1,2
1,3
1,3
1,3
Note
1,2,3
1
1
1
-
-
-
-
-
-