STD1NA60 ST Microelectronics, STD1NA60 Datasheet

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STD1NA60

Manufacturer Part Number
STD1NA60
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Datasheet

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Part Number:
STD1NA60
Manufacturer:
ST
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Part Number:
STD1NA60--252
Manufacturer:
ST
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Part Number:
STD1NA60-1
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STD1NA60-TR
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Part Number:
STD1NA601
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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
STD1NA60
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
HIGH SPEED SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
MOTOR CONTROL, AUDIO AMPLIFIERS
INDUSTRIAL ACTUATORS
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
I
V
D M
V
V
T
P
DG R
I
I
T
D S
GS
stg
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
DS(on)
600 V
V
= 7.2
DSS
Parameter
R
< 8
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
1.6 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
(Suffix ”-1”)
TO-251
IPAK
-65 to 150
Value
1
0.32
600
600
150
1.6
6.4
40
1
30
2
3
STD1NA60
(Suffix ”T4”)
TO-252
DPAK
1
W/
Unit
3
o
o
W
V
A
A
V
V
A
C
C
o
1/10
C

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STD1NA60 Summary of contents

Page 1

... Pulse width limited by safe operating area November 1996 POWER MOS TRANSISTOR IPAK TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM = 100 STD1NA60 DPAK TO-252 (Suffix ”T4”) Value Unit 600 V 600 1 6 ...

Page 2

... STD1NA60 THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink thj- amb T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited Single Pulse Avalanche Energy ...

Page 3

... G GS (see test circuit, figure 5) Test Conditions di/dt = 100 100 150 (see test circuit, figure 5) Thermal Impedance STD1NA60 Min. Typ. Max. Unit 180 Min. Typ. Max. Unit ...

Page 4

... STD1NA60 Derating Curve Transfer Characteristics Static Drain-source On Resistance 4/10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage ...

Page 5

... Capacitance Variations Normalized On Resistance vs Temperature Turn-off Drain-source Voltage Slope Normalized Gate Threshold Voltage vs Temperature Turn-on Current Slope Cross-over Time STD1NA60 5/10 ...

Page 6

... STD1NA60 Switching Safe Operating Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/10 Accidental Overload Area Fig. 2: Unclamped Inductive Waveforms ...

Page 7

... Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge Test Circuit STD1NA60 7/10 ...

Page 8

... STD1NA60 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 8/10 mm MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...

Page 9

... H 9.35 L2 0.8 L4 0.6 H DETAIL ”A” MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 DETAIL ”A” L4 STD1NA60 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.031 0.039 0068772-B 9/10 ...

Page 10

... STD1NA60 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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