STD15N06 ST Microelectronics, STD15N06 Datasheet - Page 3

• Manufacturer Part Number: STD15N06
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
Symbol
Symbol
(di/dt)
V
I
t
SDM
t
I
S D
r(Vof f)
Q
Q
d(on)
RRM
Q
I
Q
t
S D
t
t
t
rr
gs
gd
c
r
f
g
rr
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit figure)
V
R
(see test circuit figure)
V
V
R
(see test circuit figure)
I
I
V
SD
SD
DD
G
DD
G
DD
DD
GS
DD
= 47
= 47
= 15 A
= 15 A
= 30 V
= 40 V
= 48 V
= 47
= 48 V
= 25 V
Test Conditions
Test Conditions
Test Conditions
V
di/dt = 100 A/ s
V
I
I
I
I
T
D
D
D
G S
D
GS
V
V
j
= 7.5 A
= 15 A
= 15 A
= 15 A
GS
GS
= 150
= 0
= 10 V
= 10 V
= 10 V
Thermal Impedance
o
C
V
GS
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
0.16
170
170
130
40
23
10
50
70
60
8
5
Max.
Max.
Max.
250
100
170
1.5
60
34
70
15
60
STD15N06
Unit
A/ s
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/10