STD12N06 ST Microelectronics, STD12N06 Datasheet - Page 3

• Manufacturer Part Number: STD12N06
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
Symbol
Symbol
(di/dt)
V
I
t
SDM
t
I
r(Vof f)
S D
Q
Q
d(on)
I
Q
RRM
Q
t
t
S D
t
t
c
rr
r
gs
gd
f
g
rr
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit figure)
V
R
(see test circuit figure)
V
V
R
(see test circuit figure)
I
I
V
SD
SD
DD
DD
DD
DD
DD
G
G
GS
= 50
= 50
= 12 A
= 12 A
= 25 V
= 40 V
= 40 V
= 50
= 40 V
= 25 V
Test Conditions
Test Conditions
Test Conditions
V
di/dt = 100 A/ s
V
I
I
I
I
T
D
D
D
G S
D
GS
V
V
j
= 6 A
= 12 A
= 12 A
= 12 A
GS
GS
= 150
= 0
= 10 V
= 10 V
= 10 V
Thermal Impedance
o
C
V
GS
= 10 V
Min.
Min.
Min.
STD12N05/STD12N06
Typ.
Typ.
Typ.
0.12
210
40
80
15
30
40
80
60
6
5
4
Max.
Max.
Max.
120
120
1.5
60
25
45
60
12
48
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/10