STD10NF06L ST Microelectronics, STD10NF06L Datasheet

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STD10NF06L

Manufacturer Part Number
STD10NF06L
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Datasheet

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STD10NF06L
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STD10NF06L-TR
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STD10NF06LT4
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DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET
signed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC con-
verters for Telecom and Computer applications. It is
also intended for any applications with low gate drive
requirements.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STD10NF06L
TYPICAL R
SURFACE-MOUNTING DPAK (TO-252) POWER
PACKAGE IN TAPE & REEL (SUFFIX “T4”)
DC-DC & DC-AC CONVERTERS
DC MOTOR CONTROL
dv/dt (1)
Symbol
E
I
V
DM
P
AS
V
V
T
DGR
I
I
TOT
T
stg
DS
GS
D
D
TYPE
j
(
(2)
l
)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.1
process has specifically been de-
V
60V
DSS
R
<0.12
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
10A
N-CHANNEL 60V - 0.1 - 10A DPAK
I
D
STripFET™ POWER MOSFET
(1) I
(2) Starting T
SD
10A, di/dt 400A/µs, V
INTERNAL SCHEMATIC DIAGRAM
j
= 25°C, I
d
= 7A, V
– 55 to 175
STD10NF06L
Value
DPAK
DD
± 15
0.2
60
60
10
40
30
30
50
DD
7
=48V, T
=20 V
1
PRELIMINARY DATA
3
j
T
JMAX.
W/°C
V/ns
Unit
mJ
°C
W
V
V
V
A
A
A
1/7

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STD10NF06L Summary of contents

Page 1

... N-CHANNEL 60V - 0.1 - 10A DPAK STripFET™ POWER MOSFET R I DS(on) D <0.12 10A Parameter = 25° 100° 25° (2) Starting T STD10NF06L PRELIMINARY DATA 3 1 DPAK INTERNAL SCHEMATIC DIAGRAM Value 60 60 ± 0 – 175 10A, di/dt 400A/µs, V =48V JMAX ...

Page 2

... STD10NF06L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage ...

Page 3

... 4 4. (see test circuit, Figure 5) Test Conditions I = 10A 10A, di/dt = 100A/µ 20V 150° (see test circuit, Figure 5) STD10NF06L Min. Typ. Max. Unit 2.5 nC Min. Typ. Max. Unit Min. ...

Page 4

... STD10NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 inch MAX. MIN. TYP. 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 0.019 6.20 0.236 6.60 0.252 4.60 0.173 10.10 0.368 0.031 1.00 0.024 STD10NF06L MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.039 o 0 P032P_B 5/7 ...

Page 6

... STD10NF06L DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 ...

Page 7

... The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. STMicroelectronics GROUP OF COMPANIES http://www.st.com STD10NF06L 7/7 ...

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