BUP602D Siemens Semiconductor Group, BUP602D Datasheet
BUP602D
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BUP602D Summary of contents
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IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 602D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...
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Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage ...
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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 300 Gon Rise time V = 300 ...
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Power dissipation tot C parameter: T 150 °C j 160 W P tot 120 100 Safe operating area ...
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Typ. output characteristics parameter µ ° 17V 15V I 13V C 30 11V ...
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Typ. switching time inductive load , T = 125° par 300 ± ...
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Typ. gate charge Gate parameter puls 100 Short circuit safe ...
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Typ. forward characteristics parameter =125° 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal impedance ...
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Package Outlines Dimensions in mm Weight: Semiconductor Group 9 BUP 602D Jul-31-1996 ...