2SC5810 Toshiba Semiconductor, 2SC5810 Datasheet - Page 3

• Manufacturer Part Number: 2SC5810
• Description: TOSHIBA Transistor Silicon NPN Epitaxial Type
• Manufacturer: Toshiba Semiconductor

0.003
0.03
0.01
0.8
0.6
0.4
0.2
0.3
0.1
1.0
0.8
0.6
0.4
0.2
0.001
1
0
1
0
0
0
Common emitter
I C /I B = 50
Single nonrepetitive pulse
Common emitter
V CE = 2 V
Single nonrepetitive pulse
20
0.003
0.2
0.2
Collector-emitter voltage V
Base-emitter voltage V
Collector current I
0.01
0.4
0.4
V
15
CE (sat)
I
I
C
C
Ta = 100°C
− V
0.03
– V
0.6
0.6
0
Common emitter
Ta = 25 °C
Single nonrepetitive pulse
CE
BE
− I
C
25
C
0.8
0.1
0.8
BE
CE
(A)
−55
(V)
(V)
0.3
1.0
1
I B = 1 mA
10
8
6
4
2
1.2
1.2
1
3
10000
1000
0.03
100
0.3
0.1
30
0.001
10
0.001
3
1
0.003
0.003
25
Collector current I
Collector current I
Ta = 100°C
Ta = 100°C
0.01
0.01
25
−55
V
BE (sat)
h
h
−55
FE
FE
0.03
0.03
− I
− I
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Common emitter
I C /I B = 50
Single nonrepetitive pulse
C
C
− I
C
C
C
0.1
0.1
(A)
(A)
0.3
0.3
2004-07-07
2SC5810
1
1