LMBT3906LT1G Leshan Radio Company, LMBT3906LT1G Datasheet - Page 4

• Manufacturer Part Number: LMBT3906LT1G
• Description: General Purpose Transistors Pnp Silicon Lmbt3906lt1g
• Manufacturer: Leshan Radio Company

300
200
100
12
10
5.0
2.0
1.0
0.5
0.2
70
50
30
20
10
8
6
4
2
0
0.1
0.1
0.1
SOURCE RESISTANCE= 500Ω
SOURCE RESISTANCE= 200Ω
I
0.2
I
C
C
= 100 µA
0.2
= 1.0 mA
0.2
I
0.4
I
C
Figure 11. Input Impedance
C
, COLLECTOR CURRENT (mA)
0.3
0.3
, COLLECTOR CURRENT (mA)
Figure 9. Current Gain
Figure 7. Noise Figure
SOURCE RESISTANCE= 200 Ω
I
f, FREQUENCY (kHz)
C
1.0
= 0.5 mA
0.5
0.5
2.0
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
1.0
1.0
SOURCE RESISTANCE =1.0kΩ
4.0
I
C
= 50 µA
(V
10
2.0
2.0
CE
(V
= – 5.0 Vdc, T
CE
3.0
3.0
20
= 10 Vdc, f = 1.0 kHz, T
NOISE FIGURE VARIATIONS
5.0
40
5.0
h PARAMETERS
100
10
10
A
= 25°C, Bandwidth = 1.0 Hz)
14
12
10
100
8
6
4
2
0
50
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
5
2
1
0.1
A
0.1
= 25°C)
0.1
f = 1.0 kHz
0.2
LESHAN RADIO COMPANY, LTD.
0.2
0.2
0.4
Figure 12. Voltage Feedback Ratio
R
Figure 10. Output Admittance
I
C
g
0.3
, COLLECTOR CURRENT (mA)
0.3
, SOURCE RESISTANCE (kΩ)
I
Figure 8. Noise Figure
C
, COLLECTOR CURRENT (mA)
1.0
0.5
0.5
I
2.0
C
= 0.5 mA
I
C
= 1.0 mA
4.0
1.0
1.0
LMBT3906LT1G
10
2.0
2.0
20
3.0
3.0
I
I
C
40
C
= 100 µA
= 50 µA
5.0
5.0
100
4/6
10
10