TT8M2 Rohm, TT8M2 Datasheet - Page 3

• Manufacturer Part Number: TT8M2
• Description: MOSFET
• Manufacturer: Rohm

< Characteristics for the Tr2( Pch ).>
∗Pulsed
∗Pulsed
○
TT8M2
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Forward voltage
c
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Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
I
C
V
DS (on)
C
C
Q
Q
GS (th)
d (on)
d (off)
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gs
gd
fs
f
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−0.3
Min.
−20
2.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1270
Typ.
Typ.
100
140
100
120
2.5
2.0
49
68
90
30
85
12
−
−
−
−
−
9
−
Max.
Max.
−1.2
−1.0
280
±10
150
−1
68
95
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
V
f=1MHz
I
V
R
R
V
R
I
V
V
D
D
D
D
D
D
S
3/8
GS
DS
DS
DS
DS
GS
GS
GS
= −2.5A, V
= −1mA, V
= −2.5A, V
= −1.2A, V
= −1.2A, V
= −0.5A, V
DD
= −1.2A
L
G
DD
L
=10Ω
=±10V, V
= −20V, V
= −10V, I
= −10V, I
= −10V
=0V
= −4.5V
= −4.5V
8.3Ω
4Ω, R
www.DataSheet.co.kr
−10 V
−10V, I
Conditions
Conditions
G
=10Ω
GS
GS
GS
GS
GS
D
D
GS
DS
GS
D
= −1mA
= −2.5A
=0V
= −4.5V
= −2.5V
= −1.8V
= −1.5V
= −2.5A
=0V
=0V
=0V
2009.06 - Rev.A
Data Sheet
Datasheet pdf - http://www.DataSheet4U.net/