DT28F016SV-080 Intel Corporation, DT28F016SV-080 Datasheet - Page 4

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DT28F016SV-080

Manufacturer Part Number
DT28F016SV-080
Description
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
Manufacturer
Intel Corporation

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28F016SV FlashFile™ MEMORY
4
Number
-001
-002
-003
Original Version
Added 28F016SV-065/-070 at 5V V
Improved burst write transfer rate to 30.8 MB/sec.
Added 56-lead SSOP Type I packaging information.
Changed V
Increased I
Moved AC Characteristics for Extended Register Reads into separate table.
Increased V
Added Erase Suspend Command Latency times to Section 5.12
Modified Device Nomenclature Section to include SSOP package option and Ordering
Changed definition of “NC.” Removed “No internal connection to die” from description.
Added “
Added Note to Sleep Command (Section 4.4) denoting that the chip must be de-selected
Modified parameters “V” and “I” of Section 5.1 to apply to “NC” pins.
Increased I
Changed V
Corrected the graphical representation of t
Increased Typical “Page Buffer Byte/Word Program Times” from 6.0 µs to 8.0 µs (Byte)
Increased Typ. “Byte/Word Program Times” (t
Increased Typical “Block Program Times” (t
Changed “Time from Erase Suspend Command to WSM Ready” spec name to “Erase
Added “Erase Suspend Latency Time to Program” Specifications to Section 5.12
Minor cosmetic changes throughout document
I
I
I
I
Information
in order for the power consumption in sleep mode to reach deep power-down
levels.
that these currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns
and a TTL rise/fall time of <10 ns.
and 12.1 µs to 16.0 µs (Word) @ V
5.12)
t
t
t
t
Suspend Latency Time to Read;” modified typical values and added Min/Max
values at V
CCR1
CCR2
CCR1
CCR2
WHRH1A
WHRH1A
WHRH2
WHRH2
xx
from 30 mA (typ)/35 mA (max) to 40 mA (typ)/50 mA (max) @ V
from 15 mA (typ)/20 mA (max) to 20 mA (typ)/30 mA (max) @ V
from 50 mA (typ)/60 mA (max) to 75 mA (typ)/95 mA (max) @ V
from 30 mA (typ)/35 mA (max) to 45 mA (typ)/55 mA (max) @ V
” to Upper Byte of Command (Data) Definition in Sections 4.3 and 4.4.
from 1.1 sec to 1.9 sec and t
from 0.8 sec to 1.4 sec and t
PPLK
CCR
PPR
CC
from 16.5 µs to 29.0 µs and t
from 11.0 µs to 20.0 µs and t
PP
= 5V DC Characteristics (Section 5.5) marked with Note 1 to indicate
CC
MAX from 13V to 14V.
at 5V V
(V
from 2V to 1.5V.
=3.3/5V and V
PP
Read Current) for V
REVISION HISTORY
CC
and 3.3V V
PP
=5V/12V (Section 5.12)
CC
CC
CC
Description
and 28F016SV-075 at 3.3V V
:
PP
WHRH3
WHRH3
WHRH1B
WHRH1B
= 3.3V/5V and V
> V
WHGL
WHRH2
CC
WHRH1A
from 0.8 sec to 1.2 sec at V
from 0.6 sec to 0.85 sec at V
and t
from 24.0 µs to 35.0 µs at V
from 16.0 µs to 25.0 µs at V
to 200 µA at V
/t
WHRH3
EHGL
/t
WHRH1B
PP
)for V
in Figures 15 and 16.
= 5V:
) for V
CC
PP
=5V (Section 5.12):
= 3.3V and V
PP
CC
.
= 5V (Section
CC
CC
CC
CC
CC
CC
= 3.3V
= 3.3V
= 5V
= 5V
CC
CC
= 3.3V
= 5V
=3.3V
= 5V
CC
= 5V

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