DS36C200M National Semiconductor, DS36C200M Datasheet - Page 2

no-image

DS36C200M

Manufacturer Part Number
DS36C200M
Description
Dual High Speed Bi-Directional Differential Transceiver
Manufacturer
National Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS36C200M
Manufacturer:
NS
Quantity:
118
Part Number:
DS36C200M
Manufacturer:
NS/国半
Quantity:
20 000
Part Number:
DS36C200M/NOPB
Manufacturer:
LTC
Quantity:
113
Part Number:
DS36C200MX
Manufacturer:
NS/国半
Quantity:
20 000
Part Number:
DS36C200MX/NOOPB
Manufacturer:
NS/TI
Quantity:
9 500
Part Number:
DS36C200MX/NOPB
Manufacturer:
NS
Quantity:
9 207
www.national.com
DIFFERENTIAL DRIVER CHARACTERISTICS (RE
V
V
V
V
I
I
I
DIFFERENTIAL RECEIVER CHARACTERISTICS (DE = GND)
V
V
I
V
V
I
DEVICE CHARACTERISTICS
V
V
I
I
V
I
I
Symbol
OZD
OXD
OSD
IN
OSR
IH
IL
CCD
CCR
Electrical Characteristics
Over supply voltage and operating temperature ranges, unless otherwise specified
V
V
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V
Note 3: All typicals are given for V
Note 4: ESD Rating: HBM (1.5 k , 100 pF)
Note 5: C
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
Enable Input Voltage
Voltage (DI/RO)
Voltage (DO/RI
Derate M Package
Storage Temperature Range
Lead Temperature Range
OD
OH
OL
OS
TH
TL
OH
OL
IH
IL
CL
Maximum Package Power Dissipation
OD
OS
(DE, RE
M Package
EIAJ (0 , 200 pF)
L
includes probe and fixture capacitance.
*
Output Differential Voltage
V
Output High Voltage
Output Low Voltage
Offset Voltage
Offset Magnitude Change
TRI-STATE
Power-Off Leakage
Output Short Circuit Current
Input Threshold High
Input Threshold Low
Input Current
Output High Voltage
Output Low Voltage
Output Short Circuit Current
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Input Clamp Voltage
Power Supply Current
)
OD
±
Magnitude Change
)
CC
300V
Parameter
)
®
Leakage
CC
= +5.0V and T
10.04 mW/˚C above +25˚C
3.5 kV
−0.3V to (V
@
+25˚C
A
(Notes 2, 3, 7)
= +25˚C.
−65˚C to +150˚C
R
V
V
V
V
V
I
Inputs Open
Inputs Terminated, R
Inputs Shorted, V
I
V
V
V
I
No Load, DE = RE
R
DE = RE
OH
OL
CL
−0.3V to +5.9V
−0.3V to +5.9V
L
OUT
OUT
OUT
CM
IN
OUT
IN
IN
L
−0.3V to +6V
(Note 1)
= 55 , ( Figure 1 )
= 55 , DE = RE
= −18 mA
= 2.0 mA, V
= +2.4V or 0V
= −400 µA
= V
= GND or 0.4V
= 0V to 2.3V
CC
= V
= 5.5V or GND, V
= 0V
= 0V
*
1255 mW
CC
= V
+ 0.3V)
*
CC
or 2.4V
Conditions
= 0V
CC
or GND
)
ID
ID
2
= −200 mV
*
= 0V
*
t
= V
= V
= 55
Recommended Operating
Conditions
Supply Voltage (V
Receiver Input Voltage
Operating Free Air
Temperature (T
ESD Rating (Note 4)
CC
CC
(Soldering, 4 sec.)
(HBM, 1.5 k , 100 pF)
(EIAJ, 0
CC
= 0V
, 200 pF)
DO+,
DO−
A
RI+,
RE
V
Pin
RI−
RO
DE
DI,
)
CC
CC
*
)
−100
GND
−1.5
Min
172
−10
−10
−10
−15
1.0
3.8
3.8
3.8
2.0
0
0
+4.5
Min
0
0
1.36
1.15
1.25
−0.8
Typ
−60
210
4.9
4.9
4.9
4.9
0.1
±
±
−4
±
±
±
11
+5.0
4
5
3
6
Typ
1
1
1
1
1
25
+100
−100
Max
+5.5
Max
V
285
+10
+10
+10
±
±
2.4
1.6
0.4
0.8
70
35
25
−9
17
10
7
CC
10
10
OD
Units
+260˚C
and V
3.5 kV
˚C
Units
V
V
300V
mV
mV
mV
mA
mV
mV
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
ID
.

Related parts for DS36C200M