2N3741 Microsemi Corporation, 2N3741 Datasheet

no-image

2N3741

Manufacturer Part Number
2N3741
Description
Medium Power PNP Transistors
Manufacturer
Microsemi Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3741JANTXV
Manufacturer:
Microsemi
Quantity:
1 400
APPLICATIONS:
FEATURES:
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200 C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
*
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS:
MSC1041.PDF 03-12-99
Indicates JEDEC registered data.
SYMBOL
Drivers
Switches
Medium-Power Amplifiers
Low Saturation Voltage: 0.6 V
High Gain Characteristics:
Excellent Safe Area Limits
Complementary to NPN 2N3767 (2N3741)
V
T
V
V
P
CEO
STG
T
I
I
I
EB
CB
C
C
B
JC
J
D
*
*
*
*
*
*
*
*
*
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
Thermal Impedance
T
Derate above 25 C
C
= 25 C
CHARACTERISTIC
hFE @ I
CE(sat)
@ I
C
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
= 250 mA: 30-100
C
= 1.0 Amp
-65 to 200
-65 to 200
VALUE
PNP Transistors
0.143
Medium Power
7.0
4.0
2.0
80
80
10
25
7
2N3741
TO-66
UNITS
Watts
W/ C
Vdc
Vdc
Vdc
Adc
Adc
Adc
C/W
C
C

Related parts for 2N3741

2N3741 Summary of contents

Page 1

... Switches Medium-Power Amplifiers FEATURES: Low Saturation Voltage: 0.6 V High Gain Characteristics: Excellent Safe Area Limits Complementary to NPN 2N3767 (2N3741) DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas ...

Page 2

... 1.0 Adc 125 mAdc 250 mAdc 1.0 Vdc 100 mAdc Vdc 1.0 MHz mAdc Vdc 1.0 kHz Vdc 100 kHz CB C 2.0% 2N3741 VALUE Min. Max. 80 ---- ---- 0.5 ---- 100 = 150 C ---- 1.0 C ---- 1.0 ---- 100 40 ---- 30 100 20 ---- 10 ---- ---- 0.6 ---- 1 ...

Page 3

... PACKAGE MECHANICAL DATA: PACKAGE MECHANICAL DATA: .620 [15.75] MAX .958 [24.33] .962 [24.43] .142 [3.61] .152 [3.86] MSC1041.PDF 03-12-99 R.145 [3.68] MAX .050 [1.27] .075 [1.91] .470 [11.94] .500 [12.70] .050 [1.27] MAX .250 [6.35] .340 [8.64] R.350 [8.89] MAX NOTE: DIMENSIONS MILLIMETERS 2N3741 .360 [9.14] MIN SEATING PLANE .095 [2.41] .105 [2.67 .570 [14.48] .590 [14.99] .190 [4.83] .210 [5.33] .028 [0.71] .034 [0.86] ...

Related keywords