2N3497 Semicoa Semiconductor, 2N3497 Datasheet - Page 2

• Manufacturer Part Number: 2N3497
• Description: Type 2N3498 Geometry 5620 Polarity NPN
• Manufacturer: Semicoa Semiconductor

Collector-Base Breakdown Voltage
I
Collector-Emitter Breakdown Voltage
I
Emitter-Base Breakdown Voltage
I
Collector-Base Cutoff Current
V
Emitter-Base Cutoff Current
V
Forward Current Transfer Ratio
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Short Circuit Forward Current Transfer Ratio
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance, Output Open Circuited
Noise Figure
Noise Figure
Saturated Turn On Switching time to 90%
Saturated Turn Off Switching time to 10%
OFF Characteristics
ON Characteristics
Small Signal Characteristics
Switching Characteristics
C
C
C
CB
EB
= 10 µA
= 10 mA
= 10 µA
= 50 V
= 4 V
I
I
I
I
I
I
I
I
I
Forward Current Transfer Ratio
I
V
V
V
V
V
I
I
C
C
C
C
C
C
C
C
C
C
C
C
CE
CE
CE
CB
EB
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 10 mA, V
= 100 µA, V
= 1.0 mA, V
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 300 mA, I
= 150 mA, I
= 150 mA, I
= 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
= 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
= 0.5 V, IC = 0, 100 kHz < f < 1 MHz
= 20 V, I
= 10 V, I
B
B
B
C
E
CE
CE
B
B1
B2
CE
CE
= 0, 100 kHz < f < 1 MHz
= 1.0 mA
= 1.0 mA
= 1.0 mA
= 20 mA, f = 100 MHz
CE
CE
= 30 mA
= 10 V (pulsed)
= 10 V, f = 1 kHz
= 15 mA, V
= -I
= 10 V (pulsed)
= 10 V (pulsed)
= 10 V (pulsed)
= 10 V (pulsed)
B1
= 15 mA
T
EB
C
Electrical Characteristics
= 25
= 2 V
o
C unless otherwise specified
Symbol
Symbol
Symbol
Symbol
V
V
V
AC |h
V
V
V
V
(BR)CBO
(BR)CEO
(BR)CEO
I
I
C
CBO
EBO
BE(sat)1
BE(sat)3
CE(sat)1
CE(sat)3
|h
C
h
h
h
h
h
t
NF
NF
t
OFF
OBO
FE1
FE2
FE3
FE4
FE6
ON
IBO
FE
FE
|
|
Data Sheet No. 2N3498
Min
100
100
6.0
Min
Min
Min
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1.5
20
25
35
40
15
50
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---
---
---
---
---
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Max
Max
Max
Max
1150
50
25
---
---
---
120
300
115
0.8
1.4
0.2
0.6
8.0
6.0
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10
80
16
Unit
Unit
Unit
Unit
V dc
V dc
V dc
V dc
nA
nA
pF
pF
dB
dB
V
V
V
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ns
ns