RN2413 Toshiba Semiconductor, RN2413 Datasheet

RN2413

Manufacturer Part Number

RN2413

Description

(RN2412 / RN2413) Interface Circuit And Driver Circuit Applications

Manufacturer

Toshiba Semiconductor

Datasheet

1.RN2413.pdf (4 pages)

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Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1412, RN1413

Equivalent Circuit

Maximum Ratings

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

· The information contained herein is subject to change without notice.

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Characterisstic

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

(Ta = 25°C)

RN2412,RN2413

Symbol

CBO

CEO

EBO

stg

−55~150

Rating

−100

−50

200

150

−5

Unit

°C

JEDEC

EIAJ

TOSHIBA

Weight: 0.012g

RN2412,RN2413

2001-02-08 1/4

TO-236MOD

2-3F1A

SC-59

Unit in mm

000707EAA1

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RN2413 Summary of contents

Page 1

... The information contained herein is subject to change without notice. RN2412,RN2413 Symbol Rating Unit V −50 CBO V −50 CEO V −5 EBO I −100 200 150 j T −55~150 stg RN2412,RN2413 Unit in mm TO-236MOD JEDEC V SC-59 EIAJ V 2-3F1A TOSHIBA V Weight: 0.012g °C °C 2001-02-08 1/4 000707EAA1 ...

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RN2413 Toshiba Semiconductor, RN2413 Datasheet

RN2413

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RN2413 Summary of contents

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