MC10EP52 ON Semiconductor, MC10EP52 Datasheet - Page 6

• Manufacturer Part Number: MC10EP52
• Description: 3.3V / 5V ECL Differential Data and Clock D Flip-Flop
• Manufacturer: ON Semiconductor

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
17. Input and output parameters vary 1:1 with V
18. All loading with 50 W to V
19. V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
20. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
Table 10. 100EP DC CHARACTERISTICS, NECL
Table 11. AC CHARACTERISTICS
I
V
V
V
V
V
I
I
V
t
t
t
t
t
V
t
t
Symbol
Symbol
EE
IH
IL
PLH
PHL
S
H
JITTER
r
f
OH
OL
IH
IL
IHCMR
OUTpp
PP
input signal.
IHCMR
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
Power Supply Current
Output HIGH Voltage (Note 18)
Output LOW Voltage (Note 18)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 19)
Input HIGH Current
Input LOW Current
Output Voltage Amplitude @ 3.0 GHz
(Figure 2)
Propagation Delay to
Output Differential
Setup Time
Hold Time
CLOCK Random Jitter (RMS)
(Figure 2)
Input Voltage Swing
(Differential Configuration)
Output Rise/Fall Times
(20% − 80%)
Characteristic
Characteristic
CC
EE
− 2.0 V.
, V
CLK, CLK−>Q, Q
IHCMR
V
max varies 1:1 with V
CC
= 0 V; V
CC
Q, Q
.
−1945
−1225
−1945
−1145
Min
EE
0.5
20
V
Min
630
250
150
= −3.0 V to −5.5 V or V
50
70
EE
0
V
http://onsemi.com
CC
+2.0
−40°C
−1020
−1820
Typ
= 0 V, V
CC
34
−40°C
Typ
750
300
800
110
0.2
. The V
6
−1695
−1625
EE
−895
−880
Max
150
0.0
44
IHCMR
1200
Max
= −5.5 V to −3.0 V (Note 17)
350
170
1
−1945
−1225
−1945
−1145
range is referenced to the most positive side of the differential
Min
0.5
20
Min
610
280
150
V
CC
50
80
0
EE
= 3.0 V to 5.5 V; V
+2.0
−1020
−1820
25°C
Typ
35
25°C
Typ
730
330
800
120
0.2
CC
− 2.0 V.
−1695
−1625
−895
−880
Max
150
0.0
45
1200
Max
380
180
1
EE
−1145
−1945
−1225
−1945
Min
= 0 V (Note 20)
0.5
20
Min
520
310
150
50
90
V
0
EE
+2.0
−1020
−1820
85°C
Typ
85°C
37
Typ
640
360
800
130
0.2
−1695
−1625
−895
−880
Max
150
1200
Max
0.0
410
200
47
1
Unit
Unit
GHz
mA
mV
mV
mV
mV
mV
mA
mA
ps
ps
ps
ps
V