MC100EPT21 ON Semiconductor, MC100EPT21 Datasheet - Page 2

• Manufacturer Part Number: MC100EPT21
• Description: Differential LVPECL to LVTTL Translator
• Manufacturer: ON Semiconductor

* Maximum Ratings are those values beyond which damage to the device may occur.
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NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
1. All values vary 1:1 with V CC .
2. All loading with 500 ohms to GND, CL = 20pF.
3. V IHCMR min varies 1:1 with GND, max varies 1:1 with V CC .
4. F max guaranteed for functionality only. V OL and V OH levels are guaranteed at DC only.
5. Skews are measured between outputs under identical transitions.
DC CHARACTERISTICS (V CC = 3.3V
AC CHARACTERISTICS (V CC = 3.3V
MAXIMUM RATINGS*
I CCH
I CCL
V IH
V IL
I IH
I IL
V OH
V OL
I OS
V IHCMR Input HIGH Voltage Common Mode Range (Note 3.)
V BB
f max
t PLH ,
t PHL
t SK++
t SK– –
t SKPP
t JITTER
V PP
t r
t f
Symbol
Symbol
Use for inputs of same package only.
V CC
V I
I out
I BB
T A
T stg
T sol
JA
JC
Symbol
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
Maximum Toggle
Frequency (Note 4.)
Propagation Delay to
Output Differential
Output–to–Output Skew++
Output–to–Output Skew– –
Part–to–Part Skew (Note 5.)
Cycle–to–Cycle Jitter
Input Voltage Swing (Diff.)
Output Rise/Fall Times
(0.8V – 2.0V)
Power Supply Current (Outputs set to HIGH)
Power Supply Current (Outputs set to LOW)
Input HIGH Voltage (V CC = 3.3) (Note 1.)
Input LOW Voltage (V CC = 3.3) (Note 1.)
Input HIGH Current
Input LOW Current
Output HIGH Voltage (I OH = –3.0mA) (Note 2.)
Output LOW Voltage (I OL = 24mA) (Note 2.)
Output Short Circuit Current
Output Voltage Reference
Characteristic
Power Supply (GND = 0V)
Input Voltage (GND = 0V, V I not more positive than V CC )
Output Current
V BB Sink/Source Current
Operating Temperature Range
Storage Temperature
Thermal Resistance (Junction–to–Ambient)
Thermal Resistance (Junction–to–Case)
Solder Temperature (<2 to 3 Seconds: 245 C desired)
Q, Q
0.3V; GND = 0V; T A = –40 C to 85 C)
0.3V; GND = 0V)
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Parameter
1000
1000
Characteristic
Min
275
150
330
http://onsemi.com
–40 C
1450
1400
TBD
Typ
350
500
800
500
MC100EPT21
60
25
1800
1800
1200
Max
2
900
Continuous
1000
1000
Min
275
150
330
500lfpm
Still Air
Surge
25 C
1450
1400
TBD
Typ
350
500
800
500
60
25
D
D
1800
1800
1200
Max
900
41 to 44
–65 to +150
–40 to +85
0 to 3.8
0 to 3.8
Value
100
190
130
265
50
0.5
1000
1000
Min
275
150
330
2135
1490
–150
–130
Min
5.0
8.0
2.4
2.0
5%
85 C
1450
1400
TBD
Typ
350
500
800
500
Typ
60
25
2.0
12
18
1900
1900
1200
2420
1825
Max
Max
900
150
–80
0.5
0.5
3.3
20
26
VDC
VDC
Unit
mA
mA
C/W
C/W
C
C
C
Unit
Unit
MHz
mA
mA
mV
mV
mA
mV
ps
ps
ps
ps
V
V
V
V
A
A