MC10EP05 ON Semiconductor, MC10EP05 Datasheet - Page 6

• Manufacturer Part Number: MC10EP05
• Description: 3.3V / 5V ECL 2-Input Differential AND/NAND
• Manufacturer: ON Semiconductor

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
17. Input and output parameters vary 1:1 with V
18. All loading with 50 W to V
19. V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
20. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
Table 10. 100EP DC CHARACTERISTICS, NECL
Table 11. AC CHARACTERISTICS
I
V
V
V
V
V
I
I
f
t
t
t
V
t
t
Symbol
EE
IH
IL
Symbol
max
PLH
PHL
JITTER
r
f
OH
OL
IH
IL
IHCMR
PP
input signal.
IHCMR
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
Power Supply Current
Output HIGH Voltage (Note 18)
Output LOW Voltage (Note 18)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 19)
Input HIGH Current
Input LOW Current
Maximum Frequency
(Figure 2)
Propagation Delay to
Output Differential
Random Clock Jitter
(Figure 2)
Input Voltage Swing (Differential Con-
figuration)
Output Rise/Fall Times
(20% − 80%)
Characteristic
Characteristic
CC
EE
− 2.0 V.
, V
IHCMR
V
max varies 1:1 with V
CC
= 0 V; V
CC
D
D
.
Q
MC10EP05, MC100EP05
−1945
−1225
−1945
−1145
−150
Min
0.5
EE
15
V
Min
160
150
70
= −3.0 V to −5.5 V or V
EE
http://onsemi.com
V
CC
+2.0
−40°C
−1020
−1820
Typ
= 0 V, V
CC
25
−40°C
Typ
210
800
120
> 3
0.2
. The V
6
−1695
−1625
−895
−880
EE
Max
150
0.0
32
IHCMR
1200
Max
260
170
< 1
= −5.5 V to −3.0 V (Note 17)
−1145
−1945
−1225
−1945
range is referenced to the most positive side of the differential
−150
Min
0.5
17
CC
Min
170
150
V
80
EE
= 3.0 V to 5.5 V; V
+2.0
−1020
−1820
25°C
Typ
27
25°C
Typ
220
800
130
> 3
0.2
CC
−1695
−1625
− 2.0 V.
−895
−880
Max
150
0.0
1200
36
Max
270
180
< 1
EE
−1945
−1225
−1945
−1145
−150
Min
= 0 V (Note 20)
0.5
19
Min
210
150
100
V
EE
+2.0
−1020
−1820
85°C
Typ
85°C
28
Typ
260
800
150
> 3
0.2
−1695
−1625
−895
−880
Max
150
1200
Max
0.0
320
200
38
1.5
Unit
Unit
GHz
mA
mV
mV
mV
mV
mV
mA
mA
ps
ps
ps
V