2SB1189 Rohm, 2SB1189 Datasheet
2SB1189
Manufacturer Part Number
2SB1189
Description
Medium power transistor
Manufacturer
Rohm
Datasheet
1.2SB1189.pdf
(1 pages)
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Transistors
Medium power transistor (−80V, −0.7A)
2SB1189 / 2SB1238
! ! ! ! Features
1) High breakdown voltage, BV
2) Complements the 2SD1767 / 2SD1859.
! ! ! ! Absolute maximum ratings (Ta=25°C)
! ! ! ! Packaging specifications and h
! ! ! ! Electrical characteristics (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
∗1 When mounted on a 40×40×0.7 mm ceramic board.
∗2 Printed circuit board 1.7 mm thick, collector plating 1cm
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Denot es h
high current, I
Basic ordering unit (pieces)
FE
Package
Marking
Parameter
Code
Type
Parameter
h
FE
C
=−0.7A.
2SB1189
2SB1238
2SB1189
MPT3
PQR
BD
T100
1000
Symbol
∗
V
V
V
Tstg
P
Symbol
CBO
CEO
EBO
I
Tj
V
BV
BV
BV
C
C
Cob
I
I
CE(sat)
h
CEO
CBO
EBO
f
FE
CBO
CEO
EBO
T
2
=−80V, and
or larger.
2SB1238
FE
PQR
2500
ATV
TV2
−
−55~+150
Min.
−80
−80
−5
82
Limits
−
−
−
−
−
−0.7
−80
−80
150
0.5
−5
2
1
Typ.
−0.2
100
14
−
−
−
−
−
−
Max.
−0.5
−0.5
−0.4
390
20
−
−
−
−
Unit
°C
°C
W
V
V
V
A
MHz
Unit
µA
µA
pF
V
V
V
V
−
∗1
∗2
I
I
I
V
V
I
V
V
V
C
C
E
C
=−50µA
=−2mA
=−50µA
CB
EB
/I
CE
CE
CB
B
=−50V
=−4V
/I
=−10V, I
=−10V, I
=−500mA/−50mA
C
=−3V/−0.1A
! ! ! ! External dimensions (Units : mm)
E
E
2SB1189
ROHM : MPT3
EIAJ : SC-62
2SB1238
ROHM : ATV
=50mA, f=100MHz
=0A, f=1MHz
0.65Max.
Conditions
( 1 )
2.54
( 2 )
6.8
2.54
( 3 )
1.0
2SB1189 / 2SB1238
0.5
( 1 )
( 2 )
( 3 )
4.0
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
2.5
1.05
Taping specifications
0.5
2.5
0.45
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