2SB035030MLJY Silan Microelectronics, 2SB035030MLJY Datasheet

2SB035030MLJY

Manufacturer Part Number

2SB035030MLJY

Description

2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS

Manufacturer

Silan Microelectronics

Datasheet

1.2SB035030MLJY.pdf (1 pages)

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2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS (Tamb=25 C)

Reverse Voltage

Forward Voltage

Reverse Current

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

2SB035030MLJY is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

Low power losses, high efficiency;

Guard ring construction for transient protection;

High ESD capability;

High surge capability;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

Chip Size:350 m X 350 m;

Chip Thickness: 155±20 m

Parameters

Symbol

FSM

FAV

RRM

STG

Test Conditions

IF=200mA

ORDERING SPECIFICATIONS

IR=0.1mA

VR=10V

2SB035030MLJY

Product Name

Chip Topography and Dimensions

La: Chip Size: 350 m;

Lb: Pad Size: 300 m;

Ratings

-40~125

200

125

For Au and AlSi wire bonding

package

Min.

2SB035030MLJY

REV:1.0

Specification

Max.

0.50

Page 1 of 1

2007.09.18

Unit

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