PMBFJ176 Philips, PMBFJ176 Datasheet
PMBFJ176
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PMBFJ176 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 ...
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... Philips Semiconductors P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. PINNING 1 = drain 2 = source ...
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... Philips Semiconductors P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate current (d.c.) Total power dissipation ( amb Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air ...
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... Philips Semiconductors P-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS unless otherwise specified j Input capacitance MHz Feedback capacitance MHz Switching times (see Fig.2 3) Delay time Rise time Turn-on time ...
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... Philips Semiconductors P-channel silicon field-effect transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 April 1995 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...
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... These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. ...