2SD1767 Rohm, 2SD1767 Datasheet
2SD1767
Manufacturer Part Number
2SD1767
Description
Medium power transistor (80V/ 0.7A)
Manufacturer
Rohm
Datasheet
1.2SD1767.pdf
(1 pages)
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Transistors
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
! ! ! ! Features
1) High breakdown voltage, BV
2) Complements the 2SB1189 / 2SB1238.
! ! ! ! Absolute maximum ratings (Ta=25°C)
! ! ! ! Packaging specifications and h
! ! ! ! Electrical characteristics (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
∗1 Pw=10ms, duty=1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board 1.7 mm thick, collector plating 1cm
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Denot es h
high current, I
Basic ordering unit (pieces)
FE
Package
Marking
Parameter
Code
Type
Parameter
h
FE
C
=0.7A.
2SD1767
2SD1859
2SD1767
2SD1859
2SD1767
MPT3
PQR
DC
T100
1000
Symbol
∗
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
Symbol
V
C
BV
BV
BV
C
I
Cob
I
CE(sat)
CEO
h
CBO
EBO
f
FE
CBO
CEO
T
EBO
2
=80V, and
or larger.
2SD1859
FE
2500
ATV
TV2
QR
−
−55~+150
Min.
120
Limits
80
80
82
5
−
−
−
−
−
150
0.7
0.5
80
80
5
1
2
1
Typ.
120
0.2
10
−
−
−
−
−
−
−
Max.
390
390
A(Pulse)
0.5
0.5
0.4
−
−
−
−
−
A(DC)
Unit
°C
°C
W
V
V
V
MHz
Unit
µA
µA
pF
V
V
V
V
−
−
∗1
∗2
∗3
I
I
I
V
V
I
V
V
V
C
C
E
C
=50µA
CB
EB
CE
CE
CB
=50µA
=2mA
/I
B
=4V
=50V
/I
=10V, I
=10V, I
=500mA/50mA
C
=3V/0.1A
! ! ! ! External dimensions (Units : mm)
E
E
2SD1767
ROHM : MPT3
EIAJ : SC-62
2SD1859
ROHM : ATV
=−50mA, f=100MHz
=0A, f=1MHz
0.65Max.
Conditions
( 1 )
2.54
( 2 )
6.8
2.54
( 3 )
1.0
2SD1767 / 2SD1859
0.5
( 1 )
( 2 )
( 3 )
4.0
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
2.5
1.05
Taping specifications
0.5
2.5
0.45
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