MJE12007 SavantIC, MJE12007 Datasheet
MJE12007
Manufacturer Part Number
MJE12007
Description
SILICON POWER TRANSISTOR
Manufacturer
SavantIC
Datasheet
1.MJE12007.pdf
(3 pages)
www.datasheet4u.com
SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·High voltage
·Low saturation voltage
APPLICATIONS
Suited for line-operated switchmode
applications such as:
·Fluorescent lamp ballasts
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
PINNING
ABSOLUTE MAXIMUM RATINGS(T
THERMAL CHARACTERISTICS
· · With TO-220 package
SYMBOL
SYMBOL
R
V
V
V
PIN
T
I
P
th j-C
CBO
CEO
I
CM
T
EBO
1
2
3
stg
C
D
j
Base
Collector
Emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
Thermal resistance junction to case
DESCRIPTION
PARAMETER
C
=25
PARAMETER
)
Open emitter
Open base
Open collector
T
C
=25
CONDITIONS
Product Specification
MJE12007
-65~150
VALUE
1500
MAX
1.56
750
150
2.5
80
9
5
UNIT
UNIT
W
V
V
V
A
A
/W
Related parts for MJE12007
MJE12007 Summary of contents
Page 1
... Total power dissipation D T Junction temperature j Storage temperature T stg THERMAL CHARACTERISTICS SYMBOL R Thermal resistance junction to case th j-C = CONDITIONS Open emitter Open base Open collector T =25 C PARAMETER Product Specification MJE12007 VALUE UNIT 1500 V 750 2 150 -65~150 MAX UNIT 1.56 /W ...
Page 2
... DC current gain FE-2 Product Specification CONDITIONS I =50mA =1A ;I =0. = =1A ;I =0. = =RatedValue V =-1.5V CEV ; BE(off) T =100 C V = MJE12007 MIN TYP. MAX UNIT 750 V 1.0 V 2.5 V 1.5 V 2.8 V 0.25 mA 2.5 0. 2.5 ...
Page 3
... SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Product Specification MJE12007 ...