SST89V58RD Silicon Storage Technology, SST89V58RD Datasheet - Page 64

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SST89V58RD

Manufacturer Part Number
SST89V58RD
Description
FlashFlex51 MCU
Manufacturer
Silicon Storage Technology
Datasheet

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Data Sheet
TABLE 14-2: Reliability Characteristics
TABLE 14-3: AC Conditions of Test
TABLE 14-4: Recommended System Power-up Timings
TABLE 14-5: Pin Impedance
©2006 Silicon Storage Technology, Inc.
Symbol
N
T
I
Input Rise/Fall Time . . . . . . . . . . . . . . . 10 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
See Figures 14-8 and 14-10
Symbol
T
T
Parameter
C
C
L
LTH
DR
PU-READ
PU-WRITE
PIN
END
I/O
IN
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. Refer to PCI spec.
1
1
1
1
2
1
1
1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Description
I/O Pin Capacitance
Input Capacitance
Pin Inductance
Parameter
Endurance
Data Retention
Latch Up
(V
SST89E52RD2/RD / SST89E54RD2/RD / SST89E58RD2/RD
SST89V52RD2/RD / SST89V54RD2/RD / SST89V58RD2/RD
DD
=3.3V, T
L
= 100 pF
A
=25 °C, f=1 Mhz, other pins open)
T14-3.0 1255
Minimum Specification
64
100 + I
10,000
100
DD
Test Condition
Cycles
Units
Years
mA
Minimum
V
V
I/O
IN
100
100
= 0V
= 0V
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
FlashFlex51 MCU
S71255-05-000
Maximum
20 nH
15 pF
12 pF
Units
µs
µs
T14-2.0 1255
T14-4.0 1255
T14-5.0 1255
5/06

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