SST29VE010 SST, SST29VE010 Datasheet

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SST29VE010

Manufacturer Part Number
SST29VE010
Description
1 Mbit (128K x8) Page-Mode EEPROM
Manufacturer
SST
Datasheet

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FEATURES:
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Fast Page-Write Operation
• Fast Read Access Time
PRODUCT DESCRIPTION
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write
EEPROMs manufactured with SST’s proprietary, high per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE010 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/LE/VE010 conform to JEDEC stan-
dard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/LE/
VE010 provide a typical Byte-Write time of 39 µsec. The
entire memory, i.e., 128 KBytes, can be written page-by-
page in as little as 5 seconds, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of a Write cycle. To protect against inadvertent write,
the SST29EE/LE/VE010 have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, the
SST29EE/LE/VE010 are offered with a guaranteed Page-
Write endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
©2001 Silicon Storage Technology, Inc.
S71061-07-000 6/01
1
– 5.0V-only for SST29EE010
– 3.0-3.6V for SST29LE010
– 2.7-3.6V for SST29VE010
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 20 mA (typical) for 5V and 10 mA
– Standby Current: 10 µA (typical)
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
– 5.0V-only operation: 70 and 90 ns
– 3.0-3.6V operation: 150 and 200 ns
– 2.7-3.6V operation: 200 and 250 ns
(typical) for 3.0/2.7V
1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories
304
SST29EE010 / SST29LE010 / SST29VE010
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Latched Address and Data
• Automatic Write Timing
• End of Write Detection
• Hardware and Software Data Protection
• Product Identification can be accessed via
• TTL I/O Compatibility
• JEDEC Standard
• Packages Available
The SST29EE/LE/VE010 are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
the SST29EE/LE/VE010 significantly improve performance
and reliability, while lowering power consumption. The
SST29EE/LE/VE010 improve flexibility while lowering the
cost for program, data, and configuration storage applica-
tions.
To meet high density, surface mount requirements, the
SST29EE/LE/VE010 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Mode EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE010 does not require
separate Erase and Program operations. The internally
timed write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE010 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE010 are compatible with industry standard EEPROM
pinouts and functionality.
– Internal V
– Toggle Bit
– Data# Polling
Software Operation
– Flash EEPROM Pinouts and command sets
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
PP
Generation
These specifications are subject to change without notice.
SSF is a trademark of Silicon Storage Technology, Inc.
Data Sheet

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SST29VE010 Summary of contents

Page 1

... Mbit (128K x8) Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE010 – 3.0-3.6V for SST29LE010 – 2.7-3.6V for SST29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • ...

Page 2

... Data Protection load sequence, the page load cycle, and the internal write cycle. The Software Data Protection ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 consists of a specific three-byte load sequence that allows writing to the selected page and will leave the SST29EE/ LE/VE010 protected at the end of the Page-Write ...

Page 3

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Write Operation Status Detection The SST29EE/LE/VE010 provide two software means to detect the completion of a Write cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ (DQ ) ...

Page 4

... FIGURE SSIGNMENTS FOR ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 Product Identification Mode Exit In order to return to the standard read mode, the Software Product Identification mode must be exited. Exiting is accomplished by issuing the Software ID Exit (reset) opera- tion, which returns the device to the Read operation. The ...

Page 5

... Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the Write operations. To provide: 5.0V supply (±10%) for SST29EE010 3.0V supply (3.0-3.6V) for SST29LE010 2.7V supply (2.7-3.6V) for SST29VE010 Unconnected pins OE# A10 31 30 ...

Page 6

... Note: This product supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code sequence. For new designs, SST recommends that the three-byte command code sequence be used. ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 M S ODES ...

Page 7

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° ...

Page 8

... Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 5.0V±10% HARACTERISTICS DD Limits Min Max Units µA 1 µ ...

Page 9

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet TABLE 7: R ECOMMENDED Symbol Parameter 1 T Power-up to Read Operation PU-READ 1 T Power-up to Write Operation PU-WRITE 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 8: C APACITANCE (Ta = 25° ...

Page 10

... OE# High to High-Z Output OHZ 1 T Output Hold from Address Change OH 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 T P SST29EE010 IMING ARAMETERS FOR SST29EE010-70 Min ...

Page 11

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet TABLE 13 AGE RITE Symbol Parameter T Write Cycle (Erase and Program Address Setup Time AS T Address Hold Time AH T WE# and CE# Setup Time CS T WE# and CE# Hold Time CH T OE# High Setup Time OES www.DataSheet4U.com ...

Page 12

... FIGURE EAD YCLE Three-Byte Sequence for Enabling SDP ADDRESS A 16-0 5555 CE# OE# WE# DQ 7-0 AA SW0 FIGURE 5: WE# C ONTROLLED ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 OLZ CLZ HIGH IMING IAGRAM 2AAA 5555 OES ...

Page 13

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Three-Byte Sequence for Enabling SDP ADDRESS A 16-0 5555 CE# www.DataSheet4U.com OE# WE# DQ 7-0 AA SW0 FIGURE 6: CE# C ONTROLLED ADDRESS A 16-0 CE# OE# WE FIGURE ATA ©2001 Silicon Storage Technology, Inc 2AAA 5555 OES T CS ...

Page 14

... ADDRESS A 16-0 CE# www.DataSheet4U.com OE# WE FIGURE 8: T OGGLE ADDRESS A 14-0 DQ 7-0 CE# OE# WE# FIGURE 9: S OFTWARE ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 OEH BLCO IMING IAGRAM Six-Byte Sequence for Disabling Software Data Protection 5555 2AAA 5555 ...

Page 15

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet ADDRESS A 14-0 DQ 7-0 www.DataSheet4U.com CE# OE# WE# FIGURE 10: S OFTWARE ADDRESS A 14-0 5555 DQ 7-0 CE# OE# WE# FIGURE 11: S OFTWARE ©2001 Silicon Storage Technology, Inc. Six-Byte Code for Software Chip-Erase 5555 2AAA 5555 5555 2AAA BLC ...

Page 16

... ADDRESS A 14-0 DQ 7-0 www.DataSheet4U.com CE# OE# WE# FIGURE 12: S OFTWARE ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 Three-Byte Sequence for Software ID Exit and Reset 5555 2AAA 5555 IDA BLC SW0 SW1 SW2 XIT AND ESET 16 1 Mbit Page-Mode EEPROM Data Sheet 304 ILL F11 ...

Page 17

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet V IHT INPUT V ILT AC test inputs are driven at V www.DataSheet4U.com inputs and outputs are V FIGURE 13 NPUT TO DUT FIGURE 14 EST ©2001 Silicon Storage Technology, Inc REFERENCE POINTS V LT (2.4V) for a logic “1” and V (0.4 V) for a logic “ ...

Page 18

... FIGURE 15 RITE ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 Start Software Data See Figure 17 Protect Write Command Set Page Address Set Byte Address = 0 Load Byte Data Increment Byte Address By 1 Byte No Address = 128? Yes Wait T BLCO Wait for end of ...

Page 19

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Internal Timer Page-Write Initiated www.DataSheet4U.com Wait T WC Write Completed FIGURE 16 AIT PTIONS ©2001 Silicon Storage Technology, Inc. Toggle Bit Page-Write Initiated Read a byte from page Read same byte No Does DQ 6 match? Yes ...

Page 20

... Write data: 55H Address: 2AAAH Write data: A0H Address: 5555H 128 Bytes of Wait T BLCO SDP Enabled FIGURE 17: S OFTWARE ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 Load 0 to Optional Page Load Operation page data Wait ATA ROTECTION ...

Page 21

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Software Product ID Entry Command Sequence www.DataSheet4U.com FIGURE 18: S OFTWARE ©2001 Silicon Storage Technology, Inc. Software Product ID Exit & Reset Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 90H Address: 5555H Pause 10 µ ...

Page 22

... FIGURE 19: S OFTWARE ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 Software Chip-Erase Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 80H Address: 5555H Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH ...

Page 23

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet PRODUCT ORDERING INFORMATION Device Speed SST29xE010 - XXX www.DataSheet4U.com ©2001 Silicon Storage Technology, Inc. Suffix1 Suffix2 - Package Modifier leads or pins Numeric = Die modifier Package Type N = PLCC W = TSOP (die up) (8mm x 14mm TSOP (die up) (8mm x 20mm) ...

Page 24

... Note: The software Chip-Erase function is not supported by the industrial temperature part. Please contact SST, if you require this function for an industrial temperature part. ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 SST29EE010-70-4C-WH SST29EE010-70-4C-EH SST29EE010-90-4C-WH SST29EE010-90-4C-EH ...

Page 25

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet PACKAGING DIAGRAMS Optional Pin #1 Identifier .042 .048 .042 .048 www.DataSheet4U.com .585 .547 .595 .553 Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). ...

Page 26

... SST ACKAGE ODE Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 18.50 18.30 0.70 0.50 20.20 19.80 1. Complies with JEDEC publication 95 MO-142 BD dimensions, although some dimensions may be more stringent. ...

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