L320MT90QI Advanced Micro Devices, L320MT90QI Datasheet - Page 53

• Manufacturer Part Number: L320MT90QI
• Description: 32 Megabit 2 M X 16-bit/4 M X 8-bit Mirrorbit 3.0 Volt-only Boot Sector Flash Memory - Advanced Micro Devices
• Manufacturer: Advanced Micro Devices

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 3.0 V V
2. Maximum values are measured at V
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
May 16, 2003
Parameter
Sector Erase Time
Chip Erase Time
Single Word/Byte Program Time (Note 3)
Accelerated Single Word/Byte Program Time
(Note 3)
Total Write Buffer Program Time (Note 4)
Effective Write Buffer Program Time (Note 5)
Total Accelerated Write Buffer Program Time (Note 4)
(Note 5)
Chip Program Time
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Effective Accelerated Write Buffer Program Time
CC
all bits are programmed to 00h.
program/erase cycles.
13 for further information on command definitions.
Current
SS
SS
Description
on all pins except I/O pins
on all I/O pins
CC
. Test conditions: V
CC
= 3.0, worst case temperature. Maximum values are valid up to and including 100,000
Per Word
Per Word
Per Byte
Per Byte
Word
Word
Byte
Byte
D A T A S H E E T
CC
Am29LV320MT/B
= 3.0 V, one pin at a time.
Typ (Note 1)
6.25
12.5
31.5
240
200
0.5
7.5
32
60
60
54
54
15
Max (Note 2)
1200
1040
600
600
540
540
3.5
64
38
75
33
65
73
–100 mA
–1.0 V
–1.0 V
Min
CC
, Programming specification assume that
Unit
sec
sec
sec
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Excludes 00h programming
prior to erasure (Note 6)
Excludes system level
overhead (Note 7)
V
Comments
+100 mA
CC
12.5 V
Max
+ 1.0 V
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