P1303BVG ETC-unknow, P1303BVG Datasheet - Page 2

• Manufacturer Part Number: P1303BVG
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: ETC-unknow

NIKO-SEM
1
2
3
REMARK: THE PRODUCT MARKED WITH “P1303BVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
2
2
3
1
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
2
2
2
2
2
N-Channel Enhancement Mode Field
C
t
t
C
C
Q
Q
V
d(on)
d(off)
I
Q
I
SM
t
t
t
oss
SD
iss
rss
S
rr
gd
r
gs
f
Effect Transistor
g
DYNAMIC
V
I
D
V
GS
I
F
≅ 1A, V
DS
= 2.3A, dl
= 0V, V
V
= 0.5V
DS
I
F
2
= 15V , R
= 1A, V
GS
I
(BR)DSS
DS
D
= 10V, R
F
= 10A
/dt = 100A / µS
= 15V, f = 1MHz
GS
, V
L
= 0V
= 25Ω
GS
GEN
= 10V,
= 6Ω
C
= 25 °C)
P1303BVG
3100
600
275
9.0
7.0
43
15
70
20
50
9
AUG-13-2004
100
2.3
4.6
1.1
Lead Free
60
30
20
80
80
SOP-8
nC
pF
nS
nS
A
V