P1007M4 Cystech Electonics Corp., P1007M4 Datasheet - Page 3

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P1007M4

Manufacturer Part Number
P1007M4
Description
Low Vcesat Pnp Epitaxial Planar Transistor
Manufacturer
Cystech Electonics Corp.
Datasheet
Characteristic Curves
BTB1205I3
10000
1000
1000
100
100
3.5
2.5
1.5
0.5
10
4
3
2
1
0
1
1
0
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
Current Gain vs Collector Current
Collector-to-Emitter Voltage---VCE(V)
1
Collector Current---IC(mA)
10
10
Collector Current---IC(mA)
Output Characteristics
2
100
100
3
CYStech Electronics Corp.
VCE=1V
4
1000
1000
VCE=2V
IB=10mA
IB=6mA
IB=4mA
IB=2mA
IB=0
IB=20mA
5
10000
10000
6
10000
1000
100
10
12
10
7
6
5
4
3
2
1
0
8
6
4
2
0
1
0
0
IC=100IB
Saturation Voltage vs Collector Current
VCESAT
Collector-to-Emitter Voltage---VCE(V)
1
10
Collector Current---IC(mA)
50
Ambient Temperature---TA(℃)
No heat sink
Power Derating Curves
Output Characteristics
IC=40IB
2
100
100
3
CYStek Product Specification
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date :
Page No. : 3/ 5
IC=50IB
IC=30IB
4
1000
150
IB=5mA
IB=20mA
IB=15mA
IB=10mA
IB=50mA
IB=25mA
IB=0
5
10000
200
6

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