STB16NF06L ST Microelectronics, STB16NF06L Datasheet - Page 3

• Manufacturer Part Number: STB16NF06L
• Description: N-CHANNEL MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
V
SD
SD
R
DD
DD
DD
G
DD
G
= 4.7
= 16 A
= 16 A
= 30 V
= 30 V
= 16 V
= 4.7
= 48 V I
Test Conditions
Test Conditions
Test Conditions
D
Thermal Impedance
= 16 A V
V
di/dt = 100A/µs
GS
T
V
V
j
GS
= 0
= 150°C
GS
I
I
D
D
GS
= 4.5 V
= 8 A
= 4.5 V
= 8 A
= 5V
Min.
Min.
Min.
Typ.
Typ.
12.5
Typ.
67.5
7.3
2.1
3.1
2.7
10
37
20
50
STB16NF06L
Max.
Max.
Max.
1.3
10
16
64
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
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